HSA733 Epitaxial Planar Transistor Description HSA733 d

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HSA733 Epitaxial Planar Transistor Description HSA733 d

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Spec. HE6507 Issued Date 1992.12.16 Revised Date 2006.07.28 Page
HSA733
Epitaxial Planar Transistor
Description
HSA733 designed driver stage amplifier applications.
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature. +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage. VEBO Emitter Base Voltage Collector Current -100 Base Current
Electrical Characteristics =25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE
Min. -0.55
Typ. -0.18 -0.62
Max. -0.1 -0.1 -0.3 -0.7
Unit IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-60V, IE=0 VEB=-5V, IC=0
Test Conditions
IC=-100mA, IB=-10mA VCE=-6V, IC=-1mA VCE=-6V, IC=-1mA
VCE=-6V, IC=-10mA VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification
Rank Range 135-270 200-400
HSA733
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6507 Issued Date 1992.12.16 Revised Date 2006.07.28 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE(sat) IC=10IB
VCE=6V
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Voltage Collector Current
1000
Cutoff Frequancy Collector Current
1000
Cutoff Frequance (MHz).
VCE=6V
Voltage (mV)
VBE(ON) VCE=6V
1000
Collector Current-IC (mA)
Collector Current (mA)
Capacitance Reverse-Biased Voltage
10000 PT=1ms 1000
Safe Operating Area
Collector Current-IC (mA)
PT=100ms
Capacitance (pF)
PT=1s
Reverse-Biased Voltage
Forward Voltage-VCE
HSA733
HSMC Product Specification
Spec. HE6507 Issued Date 1992.12.16 Revised Date 2006.07.28 Page
PD-Ta
Power Dissipation-PD (mW)
Ambient Temperature-Ta
HSA733
HSMC Product Specification
TO-92 Dimension
Spec. HE6507 Issued Date 1992.12.16 Revised Date 2006.07.28 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSA733 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6507 Issued Date 1992.12.16 Revised Date 2006.07.28 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120
150oC 200oC 60~180
<3oC/sec
<3oC/sec
183oC 60~150 +0/-5 10~30 <6oC/sec minutes
217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature 245oC ±5oC 260oC ±5oC
Dipping time 10sec ±1sec 10sec ±1sec
HSA733
HSMC Product Specification

HSA733 Epitaxial Planar Transistor Description HSA733 d

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