HMPSH10 EPITAXIAL PLANAR TRANSISTOR Description HMPSH10

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HMPSH10 EPITAXIAL PLANAR TRANSISTOR Description HMPSH10

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Spec. HA200105 Issued Date 2000.11.01 Revised Date 2005.02.05 Page
HMPSH10
EPITAXIAL PLANAR TRANSISTOR
Description
HMPSH10 designed oscillators mixer tuner receiver. TO-92
Features
High frequency Very capacitance
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature. +150 Junction Temperature. +150 Maximum Power Dissipation Total Power Dissipation (TA=25°C). Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage. VEBO Emitter Base Voltage Collector Current
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE Min. Typ. Max. 0.95 Unit IC=100uA IC=1mA IC=10uA VCB=20V VEB=2V IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE=10V, IC=4mA VCB=10V, f=1MHz VCB=10V, IC=4mA, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HMPSH10
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HA200105 Issued Date 2000.11.01 Revised Date 2005.02.05 Page
Current Gain Collector Current
VCE=5V
VCE=10V
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000 1000
Voltage Collector Current
VBE(on) VCE=10V Saturation Voltage (mV)
VCE(sat) IC=10IB
Voltage (mV)
Collector Current-IC (mA)
Collector Current-IC (mA)
Cutoff Frequency Collector Current
Capacitance Reverae Biased Voltage
Cutoff Frequency (GHz)
Capacitance (pF)
VCE=10V
Collector Current-IC (mA)
Reverae Biased Voltage
HMPSH10
HSMC Product Specification
Characteristics Curve
PD-Ta
Spec. HA200105 Issued Date 2000.11.01 Revised Date 2005.02.05 Page
Power Dissipation-PD(mW)
Ambient Temperature-Ta(
HMPSH10
HSMC Product Specification
TO-92 Dimension
Spec. HA200105 Issued Date 2000.11.01 Revised Date 2005.02.05 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Base 2.Emitter 3.Collector Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMPSH10 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200105 Issued Date 2000.11.01 Revised Date 2005.02.05 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HMPSH10
HSMC Product Specification

HMPSH10 EPITAXIAL PLANAR TRANSISTOR Description HMPSH10

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