HLB123SA EPITAXIAL PLANAR TRANSISTOR Description High V

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HLB123SA EPITAXIAL PLANAR TRANSISTOR Description High V

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HA200601 Issued Date 2006.12.01 Revised Date 2009.04,02 Page
HLB123SA
EPITAXIAL PLANAR TRANSISTOR
Description
High Voltage, High Speed Power Switch Switch Regulators Inverters Motor Controls Solenoid Relay Drivers Deflection Circuits
TO-92
Absolute Maximum Ratings
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Total Power Dissipation (TA=25°C) Total Power Dissipation (Tc=25°C) Thermal Resistance Junctionto Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ptot Ptot TSTG Maximun rating 88.2 -55~150 Unit
Electrical Characteristics (TC=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage
Symbol BVCBO BVCEO VEBO ICBO IEBO
ICEV
Test Condition IC=1.0mA, IB=0 IC=10mA, IB=0 IE=1mA, VCB=700V, IC=0 VEB=9V, IC=0
VCE=700V, VBE(off)=1.5V
Unit
Collector Cutoff Current Emitter Cutoff Current
Collector Cut-off Current (VBE -1.5V)
Current Gain
Collector-Emitter Saturation Voltage
hFE1 hFE2
VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2
Base-Emitter Saturation Voltage
VCE=5V, IC=300mA VCE=5V, IC=1.0A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HLB123SA
HSMC Product Specification
MICROELECTRONICS CORP. Characteristics Curve
Spec. HA200601 Issued Date 2006.12.01 Revised Date 2009.04,02 Page
VBE(sat)
VCE=5V
VBE(sat)
VBE(sat) IC=5IB
0.001
0.01
0.001
0.01
VBE(sat)
VCE(sat)
VBE(sat)
VCE(sat)
VCE(sat) IC=5IB
VBE(sat) IC=4IB
0.001
0.01
0.01 0.001
0.01
VCE(sat)
Capacitance Reverse-Biased Voltage
Capacitance (pF)
VCE(sat) IC=4IB
VCE(sat)
0.01 0.001
0.01
Reverse-Biased Voltage
HLB123SA
HSMC Product Specification
Spec. HA200601 Issued Date 2006.12.01 Revised Date 2009.04,02 Page
(us)
VCE=125V IC=5IB1=-5IB2
(us)
VCE=125V IC=5IB1=-5IB2
0.01
Toff
(us)
VCE=125V IC=5IB1=-5IB2
HLB123SA
HSMC Product Specification
TO-92 Dimension
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Spec. HA200601 Issued Date 2006.12.01 Revised Date 2009.04,02 Page
Control Code
Date Code
Note: Green label used pb-free packing Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
HLB123SA
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200601 Issued Date 2006.12.01 Revised Date 2009.04,02 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec
Pb-Free Assembly <3oC/sec
150oC 60~120 <3oC/sec
200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
60~150 +0/-5 10~30 <6oC/sec minutes
Peak temperature
Dipping time 10sec ±1sec 10sec ±1sec
HLB123SA
HSMC Product Specification

HLB123SA EPITAXIAL PLANAR TRANSISTOR Description High V

Top Searches for this datasheet

Other recent searches