HLB123D EPITAXIAL PLANAR TRANSISTOR Description HLB123D

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HLB123D EPITAXIAL PLANAR TRANSISTOR Description HLB123D

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Spec. HE6603 Issued Date 1993.03.15 Revised Date 2005.08.16 Page
HLB123D
EPITAXIAL PLANAR TRANSISTOR
Description
HLB123D designed high voltage. High speed switching inductive circuits amplifier applications.
Features
High Speed Switching Saturation Voltage High Reliability
TO-126ML
Absolute Maximum Ratings (TA=25°C)
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) Maximum Voltages Currents BVCBO Collector Base Voltage BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current (DC) Collector Current (Pulse)
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Tstg Toff Min. Typ. Max. Unit Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30Ma IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification hFE1
Rank Range
HLB123D
10-17
13-22
18-27
23-32
28-37
33-42
38-47
43-50
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
Spec. HE6603 Issued Date 1993.03.15 Revised Date 2005.08.16 Page
Saturation Voltage Collector Current
10000
Saturation Voltage (mV)
1000
VCE=5V
VCE(sat) IC=10IB
1000 10000
1000
10000
Collector Current (mA)
Collector Current (mA)
Saturation Voltage Collector Current
10000
Voltage Collector Current
1000
Saturation Voltage (mV)
VBE(on) VCE=5V
1000
VBE(s IC=10IB 1000 10000
Voltage (mV)
1000
Collector Current (mA)
Collector Current (mA)
Capacitance Reverse-Biased Volatge
10.0
Switching Time Collector Current
VCC=100V, IC=5IB1 =-5IB2
Switching Time (us)
Tstg
Capacitance (pF)
Reverse-Biased Voltage
Collector Current
HLB123D
HSMC Product Specification
Spec. HE6603 Issued Date 1993.03.15 Revised Date 2005.08.16 Page
Safe Operating Area
10000
Collector Current (mA)
1000
PT=1ms PT=100ms PT=1s
1000
Forward Voltage
HLB123D
HSMC Product Specification
TO-126ML Dimension
Spec. HE6603 Issued Date 1993.03.15 Revised Date 2005.08.16 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Date Code Control Code
Note: Green label used pb-free packing Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 7.74 10.87 0.88 1.28 3.50 2.61 1.18 2.88 0.68 3.44 1.88 0.50
Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51
Typical, Unit:
3-Lead TO-126ML Plastic Package HSMC Package Code:
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB123D
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6603 Issued Date 1993.03.15 Revised Date 2005.08.16 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HLB123D
HSMC Product Specification

HLB123D EPITAXIAL PLANAR TRANSISTOR Description HLB123D

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