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HLB121A Triple Diffused Planar Type High Voltage Transistor


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Spec. HA200112 Issued Date 2001.04.01 Revised Date 2007.09.29 Page
HLB121A
Triple Diffused Planar Type High Voltage Transistor
Description
HLB121A medium power transistor designed switching applications. TO-92
Features
High breakdown voltage collector saturation voltage Fast switching speed
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature. +150 Junction Temperature +150 Maximum Power Dissipation Total Power Dissipation (TA=25°C) Total Power Dissipation (TC=25°C). Maximum Voltages Currents BVCES Collector Emitter Voltage Peak Value BVCEO Collector Emitter Voltage BVEBO Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse)
Electrical Characteristics (TA=25°C)
Symbol BVCES BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 Min. Typ. Max. Unit Test Conditions IC=100uA, VBE=0V IC=10mA IE=10uA VCB=550V VCB=400V VEB=6V IC=50mA, IB=10mA IC=100mA, IB=20mA IC=50mA, IB=10mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=5V, IC=200mA
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HLB121A
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
Spec. HA200112 Issued Date 2001.04.01 Revised Date 2007.09.29 Page
Saturation Voltage Collector Current
100000 VCE(sat) IC=5IB
Saturation Voltage (mV)
10000
1000
VCE=10V
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000
1000
Power Derating
1200
Saturation Voltage (mV)
PD(mW),Power Dissipation
VBE(s IC=5IB
1000
Collector Current-IC (mA)
Ambtient Temperatuer
Safe Operating Area
Collector Current-IC
PT=1mS
PT=100mS
PT=1S 0.01 1000
Forward Voltage-VCE
HLB121A
HSMC Product Specification
TO-92 Dimension
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Spec. HA200112 Issued Date 2001.04.01 Revised Date 2007.09.29 Page
Control Code
Date Code
Note: Green label used pb-free packing Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB121A HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10 C~35 Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200112 Issued Date 2001.04.01 Revised Date 2007.09.29 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 60~120 C/sec 60~150 +0/-5 10~30 C/sec minutes
Pb-Free Assembly C/sec 60~180 C/sec 60~150 +0/-5 20~40 C/sec minutes
Peak temperature
Dipping time 10sec ±1sec 10sec ±1sec
HLB121A
HSMC Product Specification

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