HBC556 EPITAXIAL PLANAR TRANSISTOR Description HBC556 p

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HBC556 EPITAXIAL PLANAR TRANSISTOR Description HBC556 p

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Spec. HE6422 Issued Date 1992.11.25 Revised Date 2005.02.04 Page
HBC556
EPITAXIAL PLANAR TRANSISTOR
Description
HBC556 primarily intended driver stage audio amplifiers.
Features
High Breakdown Voltage: IC=1mA High Current Gain: 75-500 IC=2mA,VCE=5V,f=1MHz
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage. VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current -100
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO VBE(on)1 VBE(on)2 *VCE(sat)1 *VCE(sat)2 *hFE Min. -600 Typ. Max. -750 -820 -300 -650 Unit IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA VCE=-5V, IC=-2mA, VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
Classification
Rank Range 125-250 220-475 Normal 75-475
HBC556
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 100000
Spec. HE6422 Issued Date 1992.11.25 Revised Date 2005.02.04 Page
Saturation Voltage Collector Current
VCE=5V
Saturation Voltage (mV)
10000
1000 VBE(sat) IC=20IB VCE(sat) IC=20IB
1000
1000
Collector Current (mA)
Collector Current (mA)
Voltage Collector Current
10000
Capacitance Reverse-Biased Voltage
1000
Capacitance (pF)
Voltage (mV)
VBE(on) VCE=5V
1000
Collector Current (mA)
Reverse-Biased Voltage
Cutoff Frequency Collector Current
1000 10000 PT=1ms
Safe Operating Area
PT=100ms
Collector Current-IC (mA)
Cutoff Frequency (MHz)
1000 PT=1s
VCE=5V
1000
Collector Current (mA)
Forward Voltage-VCE
HBC556
HSMC Product Specification
TO-92 Dimension
Spec. HE6422 Issued Date 1992.11.25 Revised Date 2005.02.04 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Collector 2.Base 3.Emitter Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBC556 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6422 Issued Date 1992.11.25 Revised Date 2005.02.04 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HBC556
HSMC Product Specification

HBC556 EPITAXIAL PLANAR TRANSISTOR Description HBC556 p

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