HAD826 EPITAXIAL PLANAR TRANSISTOR Description HAD826 d

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HAD826 EPITAXIAL PLANAR TRANSISTOR Description HAD826 d

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HE6411 Issued Date 199.03.06 Revised Date 2005.01.25 Page
HAD826
EPITAXIAL PLANAR TRANSISTOR
Description
HAD826 designed general purpose amplifier high speed, mediumpower switching applications. TO-92
Features
Collector Saturation Voltage High Speed Switching
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature. +150 Junction Temperature. Maximum Maximum Power Dissipations Total Power Dissipation (TA=25°C). Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage. VEBO Emitter Base Voltage. Collector Current 600mA
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 *hFE6 Min. Typ. Max. Unit Test Conditions IC=10uA, IE=0 IC=10mA, IB=0 IE=10uA, IC=0 VCB=60V, IE=0 VCB=60V, VEB(OFF)=3V VEB=3V, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=1V, IC=150mA IC=20mA, VCE=20V, f=100MHz VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2% HAD826 HSMC Product Specification
Characteristics Curve
Current Gain Colletor Current
1000 10000
Spec. HE6411 Issued Date 199.03.06 Revised Date 2005.01.25 Page
Saturation Voltage Collector Current
VCE=10V
Current Gain-hFE
Saturation Voltage (mV)
1000 VBE(sat)@IC=10IB
VCE=1V
VCE(sat)@IC=10IB
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Cutoff Frequency Collector Current
1000
Capacitance Reverse-Biased Voltage
Cutoff Frequency (MHz)
VCE=20V
Capacitance-(Pf)
Collector Current-IC (mA)
Reverse Biased Voltage
Safe Operating Area
10000
PD-Ta
Collector Current-IC (mA)
1000 PT=1s
PT=1ms
Power Dissipation-PD(mW)
PT=100ms
Forward Voltage-VCE
Ambient Temperature-Ta(
HAD826
HSMC Product Specification
TO-92 Dimension
Spec. HE6411 Issued Date 199.03.06 Revised Date 2005.01.25 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HAD826
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10 C~35 Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE6411 Issued Date 199.03.06 Revised Date 2005.01.25 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 60~120 C/sec 60~150 +0/-5 10~30 C/sec minutes
Pb-Free Assembly C/sec 60~180 C/sec 60~150 +0/-5 20~40 C/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HAD826
HSMC Product Specification

HAD826 EPITAXIAL PLANAR TRANSISTOR Description HAD826 d

Top Searches for this datasheet

Other recent searches