v03.0908 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, HMC499 idea

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v03.0908 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, HMC499 idea

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HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
HMC499 ideal power amplifier for: Point-to-Point Radios
Features
Output IP3: P1dB: Gain: Supply Voltage: Matched Input/Output Size: 2.04 1.09
LINEAR POWER AMPLIFIERS CHIP
Point-to-Multi-Point Radios VSAT Military Space
Functional Diagram
General Description
HMC499 high dynamic range GaAs PHEMT MMIC Medium Power Amplifier which operates between GHz. HMC499 provides gain, output power compression from supply voltage. HMC499 amplifier easily integrated into MultiChip-Modules (MCMs) small size. data with chip test fixture connected 0.025mm mil) diameter wire bonds minimal length 0.31mm mils).
Electrical Specifi cations, +25°
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd -0.8V Typ.) Min. Typ. 21.0 24.0 0.03 0.04 12.5 Max. Min. Typ. 24.0 28.0 15.5 0.03 24.5 0.04 Max. Min. Typ. 28.0 32.0 0.03 24.5 33.5 0.04 Max. Units
Adjust between achieve typical.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Broadband Gain Return Loss
RESPONSE (dB)
Gain Temperature
GAIN (dB)
LINEAR POWER AMPLIFIERS CHIP
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss Temperature
Output Return Loss Temperature
RETURN LOSS (dB)
RETURN LOSS (dB)
FREQUENCY (GHz)
FREQUENCY (GHz)
Output P1dB Temperature
P1dB (dBm) FREQUENCY (GHz)
Psat Temperature
Psat (dBm) FREQUENCY (GHz)
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Output Temperature
Noise Figure Temperature
NOISE FIGURE (dB)
(dBm)
LINEAR POWER AMPLIFIERS CHIP
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain Power Supply Voltage@ GHz, Idd=
GAIN (dB), P1dB (dBm), Psat (dBm)
Reverse Isolation Temperature
ISOLATION (dB)
Gain P1dB Psat
FREQUENCY (GHz)
Power Compression
Pout (dBm), GAIN (dB),
Pout (dBm) Gain (dB)
Power Compression
Pout (dBm), GAIN (dB),
Pout (dBm) Gain (dB)
INPUT POWER (dBm)
INPUT POWER (dBm)
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Typical Supply Current
(Vdc) +4.5 +5.0 +5.5 +3.0 (mA)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) Input Power (RFIN)(Vdd +5Vdc) Channel Temperature Continuous Pdiss (derate 16.7 mW/°C above Thermal Resistance (channel bottom) Storage Temperature Operating Temperature +5.5 1.50 °C/W +150
LINEAR POWER AMPLIFIERS CHIP
+3.5 +4.0
Note: Amplifi will operate over full voltage ranges shown above. adjusted achieve Idd= +5.0V +3.5V.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Packaging Information
Standard GP-2 Alternate
Refer "Packaging Information" section packaging dimensions. alternate packaging information contact Hittite Microwave Corporation.
NOTES: DIMENSIONS INCHES [MM] THICKNESS .004" TYPICAL BOND .004" SQUARE BACKSIDE METALLIZATION: GOLD BOND METALLIZATION: GOLD BACKSIDE METAL GROUND. CONNECTION REQUIRED UNLABELED BOND PADS.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Descriptions
Number Function RFIN Description This coupled matched Ohms Interface Schematic
Vdd1,
Power Supply Voltage amplifier. External bypass capacitors 0.01 required.
LINEAR POWER AMPLIFIERS CHIP
RFOUT
This coupled matched Ohms.
Gate control amplifier. Adjust achieve Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors 0.01 required.
Bottom
bottom must connected RF/DC ground.
Assembly Diagram
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Mounting Bonding Techniques Millimeterwave GaAs MMICs
should attached directly ground plane eutectically with conductive epoxy (see general Handling, Mounting, Bonding Note). Microstrip transmission lines 0.127mm mil) thick alumina thin film substrates recommended bringing from chip (Figure 0.254mm mil) thick alumina thin film substrates must used, should raised 0.150mm mils) that surface coplanar with surface substrate. accomplish this attach 0.102mm mil) thick 0.150mm mil) thick molybdenum heat spreader (moly-tab) which then attached ground plane (Figure Microstrip substrates should brought close possible order minimize bond wire length. Typical die-to-substrate spacing 0.076mm 0.152 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
LINEAR POWER AMPLIFIERS CHIP
Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure
Handling Precautions
Follow these precautions avoid permanent damage. Storage: bare placed either Waffle based protective containers, then sealed protective shipment. Once sealed protective been opened, should stored nitrogen environment. Cleanliness: Handle chips clean environment. attempt clean chip using liquid cleaning systems. Static Sensitivity: strikes. Follow precautions protect against
0.150mm (0.005") Thick Moly 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
Ground Plane
Transients: Suppress instrument bias supply transients while bias applied. shielded signal bias cables minimize inductive pick-up.
General Handling: Handle chip along edges with vacuum collet with sharp pair bent tweezers. surface chip fragile bridges should touched with vacuum collet, tweezers, fingers.
Mounting
chip back-metallized mounted with AuSn eutectic preforms with electrically conductive epoxy. mounting surface should clean flat. Eutectic Attach: 80/20 gold preform recommended with work surface temperature tool temperature When 90/10 nitrogen/hydrogen applied, tool temperature should expose chip temperature greater than more than seconds. more than seconds scrubbing should required attachment. Epoxy Attach: Apply minimum amount epoxy mounting surface that thin epoxy fillet observed around perimeter chip once placed into position. Cure epoxy manufacturer's schedule.
Wire Bonding
Ball wedge bond with 0.025mm mil) diameter pure gold wire. Thermosonic wirebonding with nominal stage temperature ball bonding force grams wedge bonding force grams recommended. minimum level ultrasonic energy achieve reliable wirebonds. Wirebonds should started chip terminated package substrate. bonds should short possible <0.31mm mils).
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com

v03.0908 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, HMC499 idea

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