High speed switching on-resistance secondary breakdown driving power H
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2SK2894-01R
High speed switching on-resistance secondary breakdown driving power High voltage Avalanche-proof
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Outline Drawings
TO-3PF
Applications
Switching regulators DC-DC converters General purpose power amplifier
Maximum ratings characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating storage temperature range Symbol ID[puls] Tstg Rating ±100 ±400 2536.7 +150 +150 Unit Remarks L=0.338mH, Vcc=12V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) Ciss Coss Crss td(on) td(off) Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V VGS=0V VGS=±16V VDS=0V ID=50A VGS=10V ID=50A VDS=25V =25V VGS=0V f=1MHz VCC=15V RG=10 ID=100A VGS=10V L=100µH Tch=25°C
Min.
Tch=25°C Tch=125°C VGS=4V VGS=10V
Typ.
6600 3300 1400 0.22
Max.
9900 4950 2100
Units
IF=100A VGS=0V Tch=25°C IF=50A -di/dt=100A/µs Tch=25°C
Thermal characteristics
Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a)
Min.
Typ.
Max.
30.0
Units
°C/W °C/W
Characteristics
2SK2894-01R
2SK2894-01R
2SK2894-01R
www.fujielectric.co.jp/fdt/scd
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