TIP145T/146T/147T Epitaxial Silicon Darlington Transistor Monolit
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TIP145T/146T/147T Epitaxial Silicon Darlington Transistor
TIP145T/146T/147T Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built Base-Emitter Shunt Resistors
High Current Gain 1000@ (Min.) Industrial Complement TIP140T/141T/142T
Equivalent Circuit
TO-220 1.Base 2.Collector 3.Emitter
0.12k
Absolute Maximum Ratings
Symbol
BVCBO
TC=25°C unless otherwise noted
Parameter
Collector-Base Voltage TIP145T TIP146T TIP147T
Value
Units
BVCEO
Collector-Emitter Voltage TIP145T TIP146T TIP147T Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Junction Temperature Range
BVEBO TSTG
These ratings limiting values above which serviceability semiconductor device impaired.
2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev.
www.fairchildsemi.com
TIP145T/146T/147T Epitaxial Silicon Darlington Transistor
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage TIP145T TIP146T TIP147T Collector Cut-off Current TIP145T TIP146T TIP147T
Conditions
30mA,
Min.
Typ.
Units
ICEO
30V, 40V, 50V, 60V, 80V, 100V, 10mA 10A, 40mA 10A, 40mA 30V, -20mA, 20mA 0.15 0.55 1000
ICBO
Collector Cut-off Current TIP145T TIP146T TIP147T
IEBO VCE(sat) VBE(sat) VBE(on) tstg
Emitter Cut-off Current Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Delay Time Rise Time Storage Time Fall Time
Pulse Test: Pulse Width300µs, Duty Cycle2%
2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev.
www.fairchildsemi.com
TIP145T/146T/147T Epitaxial Silicon Darlington Transistor
Typical Characteristics
100000
IC[A], COLLECTOR CURRENT
-2000µA
hFE, CURRENT GAIN
-1800µA -1600µA -1400µA -1200µA
10000
-1000µA -800µA -600µA
1000
-400µA
-0.1 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure Static Characteristic
Figure current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-1000
IC=-500IB
f=0.1MHz
VCE(sat)
Cob[pF], CAPACITANCE
VBE(sat)
-100
-0.1
-0.01 -0.1
-100 -100 -1000
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Figure Collector Output Capacitance
-100
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
TIP145T TIP146T TIP147T
-0.1 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
CASE TEMPERATURE
Figure Safe Operating Area
Figure Power Derating
2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev.
www.fairchildsemi.com
TIP145T/146T/147T Epitaxial Silicon Darlington Transistor
Mechanical Dimensions
TO220
2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev.
www.fairchildsemi.com
TIP145T/146T/147T TIP145T/146T/147T Epitaxial Silicon Darlington Transistor
2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev.
www.fairchildsemi.com
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