TIP140/TIP141/TIP142 Epitaxial Silicon Darlington Transistor

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

TIP140/TIP141/TIP142 Epitaxial Silicon Darlington Transistor

Datasheet Thumbnail

Top Searches for this datasheet

TIP140/TIP141/TIP142 Epitaxial Silicon Darlington Transistor
TIP140/TIP141/TIP142
Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built Base-Emitter Shunt Resistors High Current Gain 1000 (Min.) Industrial Complement TIP145/146/147
Equivalent Circuit
TO-3P
1.Base 2.Collector 3.Emitter
0.12k
Absolute Maximum Ratings*
Symbol VCBO Collector-Base Voltage
25°C unless otherwise noted
Parameter TIP140 TIP141 TIP142
Ratings
Units
VCEO
Collector-Emitter Voltage TIP140 TIP141 TIP142 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
VEBO TSTG
These ratings limiting values above which serviceability semiconductor device impaired.
2007 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev. 1.0.0
www.fairchildsemi.com
TIP140/TIP141/TIP142 Epitaxial Silicon Darlington Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage TIP140 TIP141 TIP142 Collector Cut-off Current TIP140 TIP141 TIP142 Collector Cut-off Current TIP140 TIP141 TIP142 Emitter Cut-off Current Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Delay Time Rise Time Storage Time Fall Time 60V, 80V, 100V, 10mA 10A, 40mA 10A, 40mA 30V, 20mA, -20mA 0.15 0.55 1000 30V, 40V, 50V, Test Condition 30mA, Min. Typ. Max. Units
ICEO
ICBO
IEBO VCE(sat) VBE(sat) VBE(on) tSTG
Pulse Test: Pulse Duty
2007 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev. 1.0.0
www.fairchildsemi.com
TIP140/TIP141/TIP142 Epitaxial Silicon Darlington Transistor
Typical Characteristics
2000mA 1800mA 1600mA 1400mA
1200
100k
800mA 600mA 400mA
IC[A], COLLECTOR CURRENT
hFE, CURRENT GAIN
200mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure Static Characteristic
Figure current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
IC=500I
f=0.1MHz
VBE(sat)
(sat)
Cob[pF], CAPACITANCE
0.01
1000
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure Collector Output Capacitance
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
TIP140 TIP141 TIP142
1000
CE[V], COLLECTOR-EMITTER VOLTAGE
CASE TEMPERATURE
Figure Safe Operating Area
Figure Power Derating
2007 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev. 1.0.0
www.fairchildsemi.com
TIP140/TIP141/TIP142 Epitaxial Silicon Darlington Transistor
Package Dimension (TO-3P)
5.00 4.60 15.80 15.40 5.20 4.80 (R0.50) 1.65 1.45
20.10 19.70
18.90 18.50
3.70 3.30 (1.85) 2.20 1.80 3.20 2.80 20.30 19.70
2.60 2.20
0.55
1.20 0.80
5.45
5.45
0.75 0.55
(R0.50)
NOTES: THIS PACKAGE CONFORMS EIAJ SC-65 PACKAGING STANDARD. DIMENSIONS MILLIMETERS. DIMENSIONING TOLERANCING ASME14.5 1973. DIMENSIONS EXCLUSIVE BURRS, MOLD FLASH, EXTRUSIONS. DRAWING FILE NAME: TO3P03AREV2.
2007 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev. 1.0.0
www.fairchildsemi.com
TIP140/TIP141/TIP142 TIP140/TIP141/TIP142 Epitaxial Silicon Darlington Transistor
TRADEMARKS
following registered unregistered trademarks service marks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. ACEx® Build NowCorePLUSCROSSVOLTCTLCurrent Transfer LogicEcoSPARK® Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFPSFRFET® Global Power ResourceSM Green FPSGreen OPTOPLANAR®
PDP-SPMPower220®
Power247® POWEREDGE® Power-SPMPowerTrench® Programmable Active DroopQFET® QSQT OptoelectronicsQuiet SeriesRapidConfigureSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETThe Power Franchise®
TinyBoostTinyBuckTinyLogic® UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION, DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
2008 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev.
www.fairchildsemi.com

TIP140/TIP141/TIP142 Epitaxial Silicon Darlington Transistor

Top Searches for this datasheet

Other recent searches