FQT1N80 N-Channel MOSFET 800V, 0.2A, Features RDS(on) 1

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FQT1N80 N-Channel MOSFET 800V, 0.2A, Features RDS(on) 1

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FQT1N80 N-Channel MOSFET
FQT1N80
N-Channel MOSFET
800V, 0.2A, Features
RDS(on) 15.5 (Typ.)@ 10V, 0.1A gate charge Typ. 5.5nC) Crss Typ. 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant
Description
These N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulse avalanche commutation mode. These devices well suited high efficient switched mode power supplies active power factor correction.
SOT-223
Series
MOSFET Maximum Ratings 25oC unless otherwise noted*
Symbol VDSS VGSS dv/dt TSTG Parameter Drain Source Voltage Gate Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derate above 25oC 25oC) -Continuous 25oC) Pulsed -Continuous 100oC) (Note (Note (Note (Note (Note FQT1N80 0.12 0.02 +150 Units V/ns W/oC
Operating Storage Temperature Range Maximum Lead Temperature Soldering Purpose, 1/8" from Case Seconds
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction Ambient* Min. Max. Units
oC/W
When mounted minimum size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation FQT1N80 Rev.
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FQT1N80 N-Channel MOSFET
Package Marking Ordering Information 25oC unless otherwise noted
Device Marking FQT1N80 Device FQT1N80 Package SOT-223 Reel Size 330mm Tape Width 12mm Quantity 4000
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Body Leakage Current 250µA, 25oC 250µA, Referenced 640V, 125oC ±30V, 800V,
±100
V/oC
Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain Source Resistance Forward Transconductance VDS, 250µA 10V, 0.1A 40V, 0.1A
(Note
15.5 0.75
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Gate Charge Gate Drain "Miller" Charge 640V,
(Note
25V, 1MHz
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time 400V,
(Note
Drain-Source Diode Characteristics
Notes: Repetitive Rating: Pulse width limited maximum junction temperature 170mH, 50V, Starting 25°C di/dt 200A/µs, BVDSS, Starting 25°C Pulse Test: Pulse width 300µs, Duty Cycle Essentially Independent Operating Temperature Typical Characteristics
Maximum Continuous Drain Source Diode Forward Current Maximum Pulsed Drain Source Diode Forward Current Drain Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 0.2A dIF/dt 100A/µs
(Note
FQT1N80 Rev.
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FQT1N80 N-Channel MOSFET
Typical Performance Characteristics
Figure On-Region Characteristics
15.0 10.0 Bottom
Figure Transfer Characteristics
Drain Current
Drain Current
Notes 250µ Pulse Test
Notes 250µs Pulse Test
VDS, Drain-Source Voltage
VGS, Gate-Source Voltage
Figure On-Resistance Variation Drain Current Gate Voltage
Figure Body Diode Forward Voltage Variation Source Current Temperature
RDS(ON) Drain-Source On-Resistance
IDR, Reverse Drain Current
Notes 250µ Pulse Test
Note
Drain Current
VSD, Source-Drain voltage
Figure Capacitance Characteristics
Ciss (Cds shorted) Coss Crss
Figure Gate Charge Characteristics
VGS, Gate-Source Voltage
160V 400V
Ciss
Capacitance [pF]
640V
Coss
Notes
Crss
Note
VDS, Drain-Source Voltage
Total Gate Charge [nC]
FQT1N80 Rev.
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FQT1N80 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure Breakdown Voltage Variation Temperature
Figure On-Resistance Variation Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
Notes
Notes
-100
-100
Junction Temperature
Junction Temperature
Figure Maximum Safe Operating Area
Operation This Area Limited DS(on)
Figure Maximum Drain Current Case Temperature
0.20 0.18
Drain Current
0.16
Drain Current
0.14 0.12 0.10 0.08 0.06 0.04 0.02
Notes
Single Pulse
0.00
VDS, Drain-Source Voltage
Case Temperature [°C]
Figure Transient Thermal Response Curve
Thermal Response (t),
FQT1N80 Rev.
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FQT1N80 N-Channel MOSFET
Gate Charge Test Circuit Waveform
Resistive Switching Test Circuit Waveforms
Unclamped Inductive Switching Test Circuit Waveforms
FQT1N80 Rev.
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FQT1N80 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit Waveforms
FQT1N80 Rev.
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FQT1N80 N-Channel MOSFET
Mechanical Dimensions
SOT-223
0.08MAX MAX1.80 1.75 ±0.20 3.50 ±0.20 (0.60)
3.00 ±0.10
0.65 ±0.20
+0.04
0.06 -0.02
2.30 (0.95) 4.60 ±0.25
0.70 ±0.10 (0.95) 0.25 -0.05
+0.10
(0.60)
1.60 ±0.20
(0.46)
(0.89)
6.50 ±0.20
FQT1N80 Rev.
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7.00 ±0.30
FQT1N80 N-Channel MOSFET
TRADEMARKS
following registered unregistered trademarks service marks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. ACEx® Build NowCorePLUSCROSSVOLTCTLCurrent Transfer LogicEcoSPARK®
Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFPSFRFET® Global Power ResourceSM
Green FPSGreen OPTOPLANAR®
PDP-SPMPower220®
Power247® POWEREDGE® Power-SPMPowerTrench® Programmable Active DroopQFET® QSQT OptoelectronicsQuiet SeriesRapidConfigureSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETThe Power Franchise®
TinyBoostTinyBuckTinyLogic® UniFETVCX
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PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains specifications product that been discontinued Fairchild Semiconductor. datasheet printed reference information only.
Rev.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
FQT1N80 Rev.
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FQT1N80 N-Channel MOSFET 800V, 0.2A, Features RDS(on) 1

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