FDS6690A Single N-Channel, Logic-Level, PowerTrench® MOSFET

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

FDS6690A Single N-Channel, Logic-Level, PowerTrench® MOSFET

Datasheet Thumbnail

Top Searches for this datasheet

FDS6690A
FDS6690A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices well suited voltage battery powered applications where in-line power loss fast switching required.
Features
RDS(ON) 12.5 RDS(ON) 17.0
Fast switching speed gate charge High performance trench technology extremely RDS(ON) High power current handling capability
SO-8
SO-8
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
+150
Power Dissipation Single Operation Single Pulse Avalanche Energy
(Note (Note (Note
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
°C/W
Package Marking Ordering Information
Device Marking FDS6690A
©2007 Fairchild Semiconductor Corporation
Device FDS6690A
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS6690A
FDS6690A
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS VGS(th) VGS(th) RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
Units
mV/°C
Characteristics
Referenced 25°C 12.0 13.7 1205
(Note
±100
mV/°C
TJ=55°C
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VGS, Referenced 25°C VGS= TJ=125°C
12.5 17.0 22.0
ID(on) Ciss Coss Crss td(on) td(off)
0.74
Dynamic Characteristics
Switching Characteristics
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward (Note Voltage Diode Reverse Recovery Time diF/dt A/µs Diode Reverse Recovery Charge
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
125°C/W when mounted minimum pad.
Scale letter size paper
Test: Pulse Width 300µs, Duty Cycle 2.0% Starting 25°C, 3mH, 30V,
FDS6690A
FDS6690A
Typical Characteristics
DRAIN CURRENT
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.0V
3.0V
6.0V
4.5V
3.5.V
3.5V
4.0V
4.5V 6.0V
3.0V
VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.05
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
11.0A
5.5A
0.04
0.03
0.02
0.01
JUNCTION TEMPERATURE (oC)
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
DRAIN CURRENT
0.01 0.001
VGS, GATE SOURCE VOLTAGE
0.0001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6690A
FDS6690A
Typical Characteristics
1600 11.0A 1MHz
VGS, GATE-SOURCE VOLTAGE
CAPACITANCE (pF)
1200
Ciss
Coss
Crss
GATE CHARGE (nC) VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
Figure Capacitance Characteristics.
DRAIN CURRENT
RDS(ON) LIMIT
100ms
SINGLE PULSE
IAS, AVALANCHE CURRENT
10ms
Tj=25
0.01 0.01
VDS, DRAIN-SOURCE VOLTAGE
0.01
tAV, TIME AVALANCHE (mS)
Figure Maximum Safe Operating Area.
Figure Unclamped Inductive Switching Capability Figure
P(pk), PEAK TRANSIENT POWER
0.001
0.01
TIME (sec)
Figure Single Pulse Maximum Power Dissipation.
Tj=125
SINGLE PULSE 125°
FDS6690A
FDS6690A
Typical Characteristic
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.05
r(t) P(pk)
SINGLE PULSE
0.02 0.01
0.01
Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6690A
FDS6690A
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. FACT Quiet board. Around world.The Power Franchise® Programmable Active FAST® QFET® QSQT OptoelectronicsQuiet SWITCHER® SMART SuperSOTTM-6 SuperSOTTM-8 TINYOPTOTruTranslationUHC® UniFETVCXWire
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION.
used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user.
PRODUCT STATUS DEFINITIONS Definition Terms
critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
Datasheet Identification Advance Information
Product Status Formative Design First Production
Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
Preliminary
Identification Needed
Full Production
Obsolete
Production
FDS6690A

FDS6690A Single N-Channel, Logic-Level, PowerTrench® MOSFET

Top Searches for this datasheet

Other recent searches