FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, General Descr

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FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, General Descr

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FDS6679AZ P-Channel PowerTrench® MOSFET
FDS6679AZ P-Channel PowerTrench® MOSFET
-30V, -13A, General Description
This P-Channel MOSFET producted using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance. This device well suited Power Management load switching applications common Notebook Computers Portable Battery Packs.
March 2009
Features
rDS(on) 9.3m -10V, -13A rDS(on) 14.8m -4.5V, -11A Extended range (-25V) battery applications protection level typical (note High performance trench technology extremely rDS(on) High power current handing capability RoHS Compliant
SO-8
MOSFET Maximum Ratings 25°C unless otherwise noted
Symbol TSTG Operating Storage Temperature Parameter Drain Source Voltage Gate Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Single Operation (Note (Note (Note (Note Ratings +150 Units
Thermal Characteristics
Thermal Resistance Junction Ambient (Note Thermal Resistance Junction Case (Note °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6679AZ Device FDS6679AZ Reel Size 13''
Tape Width 12mm
Quantity 2500 units
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev.
Electrical Characteristics 25°C unless otherwise noted
Symbol Parameter Test Conditions Units
FDS6679AZ P-Channel PowerTrench® MOSFET
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Source Leakage Current -250µA, -250µA, referenced 25°C -24V, VGS=0V ±25V, VDS=0V mV/°C
Characteristics (Note
VGS(th) VGS(th) rDS(on) Gate Source Threshold Voltage Gate Source Threshold Voltage Temperature Coefficient VDS, -250µA -250µA, referenced 25°C -10V, -13A Drain Source Resistance -4.5V, -11A -10V, -13A, 125°C -5V, -13A -1.9 11.8 10.7 14.8 13.4 mV/°C
Forward Transconductance
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -15V, 1MHz 2890 3845
Switching Characteristics (Note
td(on) td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate Source Gate Charge Gate Drain Charge -15V, -10V, -13A -15V, -5V, -13A -15V, -10V,
Drain-Source Diode Characteristic
Source Drain Diode Forward Voltage -2.1A Reverse Recovery Time Reverse Recovery Charge -13A, di/dt 100A/µs -13A, di/dt 100A/µs -0.7 -1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted copper
b)105°C/W when mounted copper
125°C/W when mounted minimun
Scale letter size paper Pulse Test:Pulse Width <300µs, Duty Cycle <2.0% diode connected between gate source serves only protection against ESD. gate overvoltage rating implied.
©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev.
www.fairchildsemi.com
FDS6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
4.5V 3.5V
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT
3.5V 4.5V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
-VDS, DRAIN SOURCE VOLTAGE
-ID, DRAIN CURRENT(A)
Figure Region Characteristics
Figure Normalized On-Resistance Drain Current Gate Voltage
-13A PULSE DURATION 80µs
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-13A
rDS(on), DRAIN SOURCE
-10V
DUTY CYCLE 0.5%MAX
ON-RESISTANCE
150oC
25oC
JUNCTION TEMPERATURE (oC)
-VGS, GATE SOURCE VOLTAGE
Figure Normalized Resistance Junction Temperature
-ID, DRAIN CURRENT
25oC -55oC 150oC
Figure On-Resistance Gate Source Voltage
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
-IS, REVERSE DRAIN CURRENT
0.01 1E-3
150oC 25oC -55oC
-VGS, GATE SOURCE VOLTAGE
-VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics
Figure Source Drain Diode Forward Voltage Source Current
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev.
FDS6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
-VGS, GATE SOURCE VOLTAGE(V)
-10V -15V -20V
10000
Ciss Coss
CAPACITANCE (pF)
1000
Crss
1MHz
GATE CHARGE(nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics
1000
-Ig(uA)
150oC
Figure Capacitance Drain Source Voltage
-IAS, AVALANCHE CURRENT(A)
25oC
0.01 1E-3 1E-4 -VGS(V)
25oC
125oC
tAV, TIME AVALANCHE(ms)
Figure
Figure Unclamped Inductive Switching Capability
DRAIN CURRENT
-ID, DRAIN CURRENT
-10V
THIS AREA LIMITED rDS(on)
-4.5V
SINGLE PULSE RATED oC/W
AMBIENT TEMPERATURE (oC)
0.01 0.01
VDS, DRAIN SOURCE VOLTAGE
Figure Maximum Continuous Drain Current Ambient Temperature
Figure Forward Bias Safe Operating Area
©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev.
www.fairchildsemi.com
FDS6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER
SINGLE PULSE oC/W
PULSE WIDTH (sec)
Figure Single Pulse Maximum Power Dissipation
NORMALIZED THERMAL IMPEDANCE,
DUTY CYCLE-DESCENDING ORDER
0.05 0.02 0.01 SINGLE PULSE
NOTES: DUTY FACTOR: t1/t2 PEAK
RECTANGULAR PULSE DURATION (sec)
Figure Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev.
www.fairchildsemi.com
FDS6679AZ P-Channel PowerTrench® MOSFET
TRADEMARKS following includes registered unregistered trademarks service marks, owned Fairchild Semiconductor and/or global subsidiaries, intended exhaustive list such trademarks. Build Transfer LogicEcoSPARK® EfficentMaxEZSWITCH*
Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFlashWriter® FPSF-PFS
FRFET® Global Power ResourceSM Green FPSGreen OPTOPLANAR®
Programmable Active DroopQFET® QSQuiet SeriesRapidConfigureSaving world, timeSmartMaxSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSSyncFET® Power Franchise®
TinyBoostTinyBuckTinyLogic® DetectTRUECURRENTTM* µSerDes
SPMPower-SPMPowerTrench® PowerXS
UHC® Ultra FRFETUniFETVCXVisualMaxXS
*Trademarks System General Corporation, used under license Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION, DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support, device, system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
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Rev.
©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev.
www.fairchildsemi.com

FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, General Descr

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