FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, Feat

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FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, Feat

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FDC365P P-Channel PowerTrench® MOSFET
FDC365P
P-Channel PowerTrench® MOSFET
-35V, -4.3A,
Features
rDS(on) -10V, -4.2A rDS(on) -4.5V, -3.2A RoHS Compliant
General Description
This P-Channel MOSFET been produced using Fairchild Semiconductor's proprietary PowerTrench® technology deliver rDS(on) optimized Bvdss capability offer superior performance benefit applications.
Applications
Inverter Power Supplies
SuperSOT-6
MOSFET Maximum Ratings 25°C unless otherwise noted
Symbol TSTG Parameter Drain Source Voltage Gate Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation Operating Storage Junction Temperature Range (Note (Note (Note Ratings -4.3 +150 Units
Thermal Characteristics
Thermal Resistance, Junction Ambient Thermal Resistance, Junction Ambient (Note (Note °C/W
Package Marking Ordering Information
Device Marking .365P Device FDC365P Package SSOT6 Reel Size Tape Width Quantity 3000 units
©2007 Fairchild Semiconductor Corporation FDC365P Rev.C
www.fairchildsemi.com
FDC365P P-Channel PowerTrench® MOSFET
Electrical Characteristics 25°C unless otherwise noted
Symbol Parameter Test Conditions Units
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Source Leakage Current -250µA, -250µA, referenced 25°C -28V, ±20V, ±100 mV/°C
Characteristics
VGS(th) VGS(th) rDS(on) Gate Source Threshold Voltage Gate Source Threshold Voltage Temperature Coefficient Static Drain Source Resistance Forward Transconductance VDS, -250µA -250µA, referenced 25°C -10V, -4.2A -4.5V, -3.2A -10V, -4.2A, 125°C -10V, -4.2A -1.8 mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance -20V, 1MHz 1MHz
Switching Characteristics
td(on) td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate Source Charge Gate Drain "Miller" Charge -10V -20V, -4.2A -20V, -4.2A, -10V, RGEN
Drain-Source Diode Characteristics
Source Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -1.3A (Note -0.8 -1.2 -4.2A, di/dt 100A/µs
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design. 78°C/W when mounted copper FR-4 board. 156°C/W when mounted minimum copper.
Pulse Test: Pulse Width 300µs, Duty cycle 2.0%.
©2007 Fairchild Semiconductor Corporation FDC365P Rev.C
www.fairchildsemi.com
FDC365P P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
-ID, DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-10V
-3.5V PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
-4.5V
-10V -4.5V
-3.5V
-VDS, DRAIN SOURCE VOLTAGE
-ID, DRAIN CURRENT(A)
Figure On-Region Characteristics
Figure Normalized On-Resistance Drain Current Gate Voltage
SOURCE ON-RESISTANCE
NORMALIZED DRAIN SOURCE ON-RESISTANCE
4.2A -10V
-4.2A
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
125oC
rDS(on), DRAIN
25oC
JUNCTION TEMPERATURE (oC)
-VGS, GATE SOURCE VOLTAGE
Figure Normalized Resistance Junction Temperature
-IS, REVERSE DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX -ID, DRAIN CURRENT
Figure On-Resistance Gate Source Voltage
150oC
150oC
25oC
25oC
0.01
-55oC
-55oC
0.001
-VGS, GATE SOURCE VOLTAGE
-VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics
Figure Source Drain Diode Forward Voltage Source Current
©2007 Fairchild Semiconductor Corporation FDC365P Rev.C
www.fairchildsemi.com
FDC365P P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
-VGS, GATE SOURCE VOLTAGE(V) -4.2A
1000
-20V
-15V
-25V
GATE CHARGE(nC)
CAPACITANCE (pF)
Ciss
1MHz
Coss
Crss
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics
Figure Capacitance Drain Source Voltage
P(PK), PEAK TRANSIENT POWER
-ID, DRAIN CURRENT
0.1ms
-10V
SINGLE PULSE
THIS AREA LIMITED rDS(on)
10ms
100ms
SINGLE PULSE RATED 156oC/W 25oC
0.01
1000
-VDS, DRAIN SOURCE VOLTAGE
PULSE WIDTH
Figure Forward Bias Safe Operating Area
Figure Single Pulse Maximum Power Dissipation
NORMALIZED THERMAL IMPEDANCE,
DUTY CYCLE-DESCENDING ORDER
0.05 0.02 0.01
0.01
SINGLE PULSE
NOTES: DUTY FACTOR: t1/t2 PEAK
0.001
1000
RECTANGULAR PULSE DURATION (sec)
Figure Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation FDC365P Rev.C
www.fairchildsemi.com
FDC365P P-Channel PowerTrench® MOSFET
Dimensional Outline Layout
©2007 Fairchild Semiconductor Corporation FDC365P Rev.C
www.fairchildsemi.com
Preliminary Datasheet
FDC365P P-Channel PowerTrench® MOSFET
TRADEMARKS
following registered unregistered trademarks service marks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. ACEx® Build NowCorePLUSCROSSVOLTCTLCurrent Transfer LogicEcoSPARK®
Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFPSFRFET® Global Power ResourceSM
Green FPSGreen OPTOPLANAR®
PDP-SPMPower220®
Power247® POWEREDGE® Power-SPMPowerTrench® Programmable Active DroopQFET® QSQT OptoelectronicsQuiet SeriesRapidConfigureSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETThe Power Franchise®
TinyBoostTinyBuckTinyLogic® UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION, DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support, device, system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition
This datasheet contains design specifications product development. Specifications change manner without notice.
Rev.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains specifications product that been discontinued Fairchild Semiconductor. datasheet printed reference information only.
Identification Needed
Full Production
Obsolete
Production
©2007 Fairchild Semiconductor Corporation FDC365P Rev.C
www.fairchildsemi.com

FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, Feat

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