DS5753-2.4 2009 (LN26738) Double Side Cooling High Surge Capabili
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DCR4100W42
DS5753-2.4 2009 (LN26738)
Double Side Cooling High Surge Capability
PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 3880A 53500A 1500V/µs 400A/µs
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part Ordering Number Repetitive Peak Voltages VDRM VRRM 4200 4000 3500 3000 Conditions
Higher dV/dt selections available
DCR4100W42 DCR4100W40 DCR4100W35 DCR4100W30
-40° 125° IDRM IRRM 200mA, VDRM, VRRM 10ms, VDSM VRSM VDRM VRRM 100V respectively
Lower voltage grades available.
Outline type code: (See Package Details further information)
ORDERING INFORMATION
When ordering, select required part number shown Voltage Ratings selection table. example: DCR4100W42
Note: Please complete part number when ordering quote this number future correspondence relating your order.
Fig. Package outline
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DCR4100W42
SEMICONDUCTOR
CURRENT RATINGS
Tcase unless stated otherwise
Symbol Double Side Cooled IT(AV) IT(RMS)
Parameter
Test Conditions
Max.
Units
Mean on-state current value Continuous (direct) on-state current
Half wave resistive load
3880 6095 5725
SURGE RATINGS
Symbol ITSM
Parameter Surge (non-repetitive) on-state current fusing
Test Conditions 10ms half sine, Tcase 125°
Max. 53.5 14.31
Units
THERMAL MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance junction case Test Conditions Double side cooled Single side cooled Anode Cathode Rth(c-h) Thermal resistance case heatsink Clamping force 76kN (with mounting compound) Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Storage temperature range Clamping force Double side Single side Min. 68.0 Max. 0.00631 0.01115 0.01453 0.0014 0.0028 84.0 Units
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DCR4100W42
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse off-state current Max. linear rate rise off-state voltage Rate rise on-state current
Test Conditions VRRM/VDRM, Tcase 125° VDRM, 125° gate open From VDRM IT(AV) Gate source 30V, 0.5µs, 125°
Repetitive 50Hz Non-repetitive
Min.
Max. 1500
Units V/µs A/µs A/µs
VT(TO)
Threshold voltage level Threshold voltage High level
700A 4100A Tcase 125° 4100A 12000A Tcase 125° 700A 4100A Tcase 125° 4100A 12000A Tcase 125° VDRM, gate source 30V, 0.5µs,
0.83 0.1688 0.1263
On-state slope resistance level On-state slope resistance High level
Delay time
Turn-off time
125° 200V, dI/dt 1A/µs, dVDR/dt 20V/µs linear
Stored charge Latching current Holding current
2000A, 125° dI/dt 1A/µs, RG-K 500A,
1500
4500
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DCR4100W42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS RATINGS
Symbol
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM Tcase VDRM, Tcase 125° VDRM Tcase VDRM Tcase
Max.
Units
CURVES
7000
Instantaneous on-state current
6000 5000 4000 3000 2000 1000
125° 125° 125°
Instantaneous on-state voltage
Fig.2 Maximum minimum on-state characteristics
VEQUATION (IT) C.IT+D.
Where
0.348967 0.066851 0.000102 0.003788 these values valid 125° 500A 10000A
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DCR4100W42
SEMICONDUCTOR
Maximum case temperature, case
1000 2000 3000 4000
Mean power dissipation (kW)
1000 2000 3000 4000 5000 6000
5000
6000
Mean on-state current, IT(AV)
Mean on-state current, IT(AV)
Fig.3 On-state power dissipation sine wave
Fig.4 Maximum permissible case temperature, double side cooled sine wave
Maximum heatsink temperature, Heatsink
1000 2000 3000 4000 5000 6000
Mean power dissipation (kW)
1000 2000 3000 4000 5000 6000 7000 8000 d.c.
Mean on-state current, IT(AV)
Mean on-state current, IT(AV)
Fig.5 Maximum permissible heatsink temperature, double side cooled sine wave
Fig.6 On-state power dissipation rectangular wave
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DCR4100W42
SEMICONDUCTOR
Maximum permissible case temperature Tcase
Maximum heatsik temperature Theatsink (oC) d.c.
1000 2000 3000 4000 5000 6000 7000 8000 1000 2000 3000 4000 5000 6000 7000 8000
d.c.
Mean on-state current, IT(AV)
Mean on-state current, IT(AV)
Fig.7 Maximum permissible case temperature, double side cooled rectangular wave
Double Side Cooling
Fig.8 Maximum permissible heatsink temperature, double side cooled rectangular wave
0.8816 0.0106818 1.5197 0.0170581 1.4106 0.0158344 1.2993 0.058404 3.2398 0.2424644 2.4667 0.1786951 2.8048 0.3584979 5.7622 6.013 6.7451 3.6201 1.3305 1.1285 0.6312 15.364 3.9054 6.196
Double side cooled Anode side cooled Cathode side cooled
C/kW) C/kW) C/kW)
Thermal Impedance, Zth(j-c) C/kW)
Anode Side Cooling Cathode Sided Cooling
1-exp. (t/ti))]
Conduction
0.001 0.01
Tables show increments thermal resistance th(j-c) when device operates conduction angles other than d.c.
Double side cooling Anode Side Cooling Cathode Sided Cooling
sine. 1.00 1.16 1.33 1.48 1.61 1.66
rect. 0.67 0.97 1.13 1.31 1.51 1.61
sine. 0.94 1.08 1.23 1.37 1.47 1.52
rect. 0.64 0.91 1.06 1.22 1.38 1.47
sine. 0.95 1.09 1.25 1.38 1.49 1.54
rect. 0.65 0.92 1.07 1.23 1.40 1.49
Time
Fig.9 Maximum (limit) transient thermal impedance junction case C/kW)
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DCR4100W42
SEMICONDUCTOR
Conditions: Tcase 125°C Pulse width 10ms
Surge current, ITSM (kA)
Conditions: Tcase= 125°C half-sine wave
Surge current, ITSM- (kA)
Number cycles
Fig.10 Multi-cycle surge current
30000 Reverse recovery current,
Pulse width, (ms)
Fig.11 Single-cycle surge current
25000 Stored Charge, (uC)
5404.7*(di/dt)0.4733
Conditions: VRpeak 2500V, 1700V snubber required control reverse voltages
20000
2246.2*(di/dt)
0.5657
62.4*(di/dt)0.7284
15000
10000
5000
Conditions: VRpeak 2500V, 1700V snubber required control reverse voltages
36.417*(di/dt)0.8041
Rate decay on-state current, di/dt (A/us)
ITSM
Rate decay on-state current, di/dt (A/us)
Fig.12 Stored charge
Fig.13 Reverse recovery current
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DCR4100W42
SEMICONDUCTOR
Pulse Width 1000 10000 Pulse Power (Watts) Frequency
Gate trigger voltage,
Upper Limit
Preferred gate drive area
25oC
-40oC
Lower Limit
Gate trigger current IGT,
Fig14 Gate Characteristics
Lower Limit Upper Limit 100W 150W -40C
Gate trigger voltage,
Gate trigger current,
Fig. Gate characteristics
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DCR4100W42
SEMICONDUCTOR
PACKAGE DETAILS
further package information, please contact Customer Services. dimensions unless stated otherwise. SCALE.
ANGLE PROJECTION
SCALE
DOUBT
HOLE 2.00 DEEP BOTH ELECTRODES)
OFFSET (NOM.) GATE TUBE
Device DCR1594SW28 DCR1595SW42 DCR1596SW52 DCR5450W22 DCR4910W28 DCR4100W42 DCR3640W52 DCR2950W65 DCR2450W85
Maximum Minimum Thickness Thickness (mm) (mm) 27.34 26.79 27.57 27.02 27.69 27.14 27.265 26.715 27.34 26.79 27.57 27.02 27.69 27.14 27.95 27.4 28.31 27.76
MAX. CATHODE
NOM.
GATE NOM. PACKAGE HEIGHT TABLE
ANODE
Lead length: 420mm Lead terminal connector: ring Package outline type code:
Fig.16 Package outline
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DCR4100W42
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY Power Assembly group provide support service those customers requiring more than basic semiconductor, developed flexible range heatsink clamping systems line with advances device voltages current capability semiconductors. offer extensive range liquid cooled assemblies covering full range circuit designs general today. Assembly group offers high quality engineering support dedicated designing units satisfy growing needs customers. Using latest methods team design applications engineers provide Power Assembly Complete Solution (PACs). HEATSINKS Power Assembly group proprietary range extruded aluminium heatsinks which have been designed optimise performance Dynex semiconductors. Data with respect natural, forced liquid cooling (with flow rates) available request. further information device clamps, heatsinks assemblies, please contact your nearest sales representative Customer Services.
Stresses above those listed this data sheet cause permanent damage device. extreme conditions, with semiconductors, this include potentially hazardous rupture package. Appropriate safety precautions should always followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR Doddington Road, Lincoln Lincolnshire, 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION RESALE. PRODUCED UNITED KINGDOM.
This publication issued provide information only which (unless agreed Company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. warranty guarantee express implied made regarding capability, performance suitability product service. Company reserves right alter without prior notice specification, design price product service. Information concerning possible methods provided guide only does constitute guarantee that such methods will satisfactory specific piece equipment. user's responsibility fully determine performance suitability equipment using such information ensure that publication data used date been superseded. These products suitable medical products whose failure perform result significant injury death user. products materials sold services provided subject Company's conditions sale, which available request. brand names product names used this publication trademarks, registered trademarks trade names their respective owners.
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