DS5810-1.3 September 2007 (LN25549) Double Side Cooling High Surg

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DS5810-1.3 September 2007 (LN25549) Double Side Cooling High Surg

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DCR3030V42
DS5810-1.3 September 2007 (LN25549)
Double Side Cooling High Surge Capability
PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 3030A 40600A 1500V/µs 400A/µs
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part Ordering Number Repetitive Peak Voltages VDRM VRRM 4200 4000 3500 3000 Conditions
Higher dV/dt selections available
DCR3030V42 DCR3030V40 DCR3030V35 DCR3030V30
-40° 125° IDRM IRRM 200mA, VDRM, VRRM 10ms, VDSM VRSM VDRM VRRM 100V respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select required part number shown Voltage Ratings selection table. example: DCR3030V42
Note: Please complete part number when ordering quote this number future correspondence relating your order. Outline type code: (See Package Details further information)
Fig. Package outline
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DCR3030V42
SEMICONDUCTOR
CURRENT RATINGS
Tcase unless stated otherwise
Symbol Double Side Cooled IT(AV) IT(RMS)
Parameter
Test Conditions
Max.
Units
Mean on-state current value Continuous (direct) on-state current
Half wave resistive load
3030 4760 4550
SURGE RATINGS
Symbol ITSM
Parameter Surge (non-repetitive) on-state current fusing
Test Conditions 10ms half sine, Tcase 125°
Max. 40.6 8.24
Units
THERMAL MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance junction case Test Conditions Double side cooled Single side cooled Anode Cathode Rth(c-h) Thermal resistance case heatsink Clamping force 54kN (with mounting compound) Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Storage temperature range Clamping force Double side Single side Min. 48.0 Max. 0.00746 0.0130 0.0178 0.002 0.004 59.0 Units
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DCR3030V42
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse off-state current Max. linear rate rise off-state voltage Rate rise on-state current
Test Conditions VRRM/VDRM, Tcase 125° VDRM, 125° gate open From VDRM IT(AV) Gate source 30V, 0.5µs, 125°
Repetitive 50Hz Non-repetitive
Min.
Max. 1500
Units V/µs A/µs A/µs
VT(TO)
Threshold voltage level Threshold voltage High level
200A 1700A Tcase 125° 1700A 7000A Tcase 125° 200A 1700A Tcase 125° 1700A 7000A Tcase 125° VDRM, gate source 30V, 0.5µs,
0.82 0.98 0.292 0.198
On-state slope resistance level On-state slope resistance High level
Delay time
Turn-off time
125° 200V, dI/dt 1A/µs, dVDR/dt 20V/µs linear
Stored charge Latching current Holding current
125° dI/dt 1A/µs, =3000V, VRM= 1700V RG-K 500A,
1600
3500
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DCR3030V42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS RATINGS
Symbol
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM Tcase VDRM, Tcase 125° VDRM Tcase VDRM Tcase
Max.
Units
CURVES
7000
Instantaneous on-state current
6000 5000 4000 3000 2000 1000
125° 125°
Instantaneous on-state voltage
Fig.2 Maximum minimum on-state characteristics
VEQUATION (IT) C.IT+D.
0.866995 -0.042053 0.000100 0.014062 these values valid 125° 500A 10000A
Where
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DCR3030V42
SEMICONDUCTOR
Maximum case temperature, case
Mean power dissipation (kW)
1000 2000 3000
1000 2000 3000 4000 5000
4000
5000
Mean on-state current, IT(AV) Fig.3 On-state power dissipation sine wave
Mean on-state current, IT(AV) Fig.4 Maximum permissible case temperature, double side cooled sine wave
Maximum heatsink temperature, Heatsink
1000 2000
Mean power dissipation (kW)
1000 2000 3000 4000 d.c. 5000 6000
3000
4000
Mean on-state current, IT(AV) Fig.5 Maximum permissible heatsink temperature, double side cooled sine wave
Mean on-state current, IT(AV)
Fig.6 On-state power dissipation rectangular wave
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DCR3030V42
SEMICONDUCTOR
Maximum permissible case temperature Tcase
2000 4000 6000
Maximum heatsik temperature Theatsink
d.c.
1000 2000 3000 4000
d.c.
8000
5000
6000
Mean on-state current, IT(AV)
Mean on-state current, IT(AV)
Fig.7 Maximum permissible case temperature, double side cooled rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled rectangular wave
0.9206 0.0076807 0.9032 0.0075871 0.9478 0.0078442 1.8299 0.0579454 1.6719 0.0536531 2.0661 0.0645541 3.4022 0.4078613 3.0101 0.3144537 1.6884 0.3894389 1.3044 1.2085 7.4269 5.624 13.0847 4.1447
Double side cooled Anode side cooled
C/kW) C/kW) C/kW)
Thermal Impedance th(j-c) C/kW)
0.001 Double Side Cooling Anode Side Cooling Cathode Sided Cooling
Cathode side cooled
1-exp. (t/ti))]
Conduction
Tables show increments thermal resistance th(j-c) when device operates conduction angles other than d.c.
Double side cooling Anode Side Cooling Cathode Sided Cooling
sine. 1.34 1.57 1.83 2.08 2.27 2.36
rect. 0.88 1.30 1.54 1.81 2.11 2.28
sine. 1.34 1.57 1.84 2.08 2.28 2.37
rect. 0.88 1.30 1.54 1.81 2.11 2.28
sine. 1.33 1.57 1.83 2.07 2.26 2.35
rect. 0.88 1.29 1.53 1.80 2.10 2.26
0.01
Time Fig.9 Maximum (limit) transient thermal impedance junction case C/kW)
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DCR3030V42
SEMICONDUCTOR
Conditions: Tcase 125° Pulse width 10ms Conditions: Tcase= 125° half-sine wave
Surge current, ITSM- (kA)
Surge current, ITSM (kA)
ITSM
Number cycles
Pulse width, (ms)
Fig.10 Multi-cycle surge current
18000 QSmax 16000 14000 Stored Charge, (uC) 12000 10000 8000 6000 4000 2000
Conditions: 125oC VRpeak 2500V 1700V snubber appropriate control reverse voltages.
Fig.11 Single-cycle surge current
3397.4*(di/dt)0.5061 QSmin 1357.3*(di/dt)
0.6271
Reverse recovery current,
IRRmax 48.236*(di/dt)0.7553
IRRmin
29.853*(di/dt)0.8222
Conditions: Tj=125 VRpeak 2500V 1700V snubber approriate control reverse voltages
Rate decay on-state current, di/dt (A/us)
Rate decay on-state current, di/dt (A/us)
Fig. Stored Charge
Fig. Reverse Recovery Current
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DCR3030V42
SEMICONDUCTOR
Pulse Width 1000 10000 Pulse Power (Watts) Frequency
Gate trigger voltage,
Upper Limit
Preferred gate drive area
25oC
-40oC
Lower Limit
Gate trigger current IGT,
Fig14 Gate Characteristics
Lower Limit Upper Limit 100W 150W -40C
Gate trigger voltage,
Gate trigger current,
Fig. Gate characteristics
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DCR3030V42
SEMICONDUCTOR
PACKAGE DETAILS
further package information, please contact Customer Services. dimensions unless stated otherwise. SCALE.
ANGLE PROJECTION
SCALE
DOUBT HOLE 2.00 DEEP BOTH ELECTRODES)
OFFSET (NOM.) GATE TUBE
MAX. CATHODE
NOM.
Device DCR1474SV18 DCR1475SV28 DCR1476SV42 DCR1478SV48 DCR1574SV28 DCR1575SV42 DCR1576SV52 DCR4060V22 DCR3780V28 DCR3030V42 DCR2720V52 DCR2290V65 DCR1910V85
Maximum Minimum Thickness Thickness (mm) (mm) 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.34 26.59 27.57 26.82 27.69 26.94 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.95 27.2 28.31 27.56
GATE ANODE NOM. PACKAGE HEIGHT TABLE
Lead length: 420mm Lead terminal connector: ring Package outline type code:
Fig.16Package outline
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DCR3030V42
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY Power Assembly group provide support service those customers requiring more than basic semiconductor, developed flexible range heatsink clamping systems line with advances device voltages current capability semiconductors. offer extensive range liquid cooled assemblies covering full range circuit designs general today. Assembly group offers high quality engineering support dedicated designing units satisfy growing needs customers. Using latest methods team design applications engineers provide Power Assembly Complete Solution (PACs). HEATSINKS Power Assembly group proprietary range extruded aluminium heatsinks which have been designed optimise performance Dynex semiconductors. Data with respect natural, forced liquid cooling (with flow rates) available request. further information device clamps, heatsinks assemblies, please contact your nearest sales representative Customer Services.
Stresses above those listed this data sheet cause permanent damage device. extreme conditions, with semiconductors, this include potentially hazardous rupture package. Appropriate safety precautions should always followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR Doddington Road, Lincoln Lincolnshire, 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION RESALE. PRODUCED UNITED KINGDOM.
This publication issued provide information only which (unless agreed Company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. warranty guarantee express implied made regarding capability, performance suitability product service. Company reserves right alter without prior notice specification, design price product service. Information concerning possible methods provided guide only does constitute guarantee that such methods will satisfactory specific piece equipment. user's responsibility fully determine performance suitability equipment using such information ensure that publication data used date been superseded. These products suitable medical products whose failure perform result significant injury death user. products materials sold services provided subject Company's conditions sale, which available request. brand names product names used this publication trademarks, registered trademarks trade names their respective owners.
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DS5810-1.3 September 2007 (LN25549) Double Side Cooling High Surg

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