DS5823-1.2 August 2007 (LN25546) Double Side Cooling High Surge C

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DS5823-1.2 August 2007 (LN25546) Double Side Cooling High Surge C

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DCR1350F42
DS5823-1.2 August 2007 (LN25546)
Double Side Cooling High Surge Capability
PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 1350A 18150A 1500V/µs 400A/µs
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part Ordering Number Repetitive Peak Voltages VDRM VRRM 4200 4000 3500 3000 Conditions
Higher dV/dt selections available
DCR1350F42 DCR1350F40 DCR1350F35 DCR1350F30
-40° 125° IDRM IRRM 100mA, VDRM, VRRM 10ms, VDSM VRSM VDRM VRRM 100V respectively
Outline type code: (See Package Details further information)
Fig. Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select required part number shown Voltage Ratings selection table. example: DCR1350F42
Note: Please complete part number when ordering quote this number future correspondence relating your order.
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DCR1350F42
SEMICONDUCTOR
CURRENT RATINGS
Tcase unless stated otherwise
Symbol Double Side Cooled IT(AV) IT(RMS)
Parameter
Test Conditions
Max.
Units
Mean on-state current value Continuous (direct) on-state current
Half wave resistive load
1350 2120 2040
SURGE RATINGS
Symbol ITSM
Parameter Surge (non-repetitive) on-state current fusing
Test Conditions 10ms half sine, Tcase 125°
Max. 18.15 1.65
Units
THERMAL MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance junction case Test Conditions Double side cooled Single side cooled Anode Cathode Rth(c-h) Thermal resistance case heatsink Clamping force (with mounting compound) Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Storage temperature range Clamping force Double side Single side Min. 22.0 Max. 0.0171 0.0313 0.0378 0.004 0.008 25.0 Units
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DCR1350F42
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse off-state current Max. linear rate rise off-state voltage Rate rise on-state current
Test Conditions VRRM/VDRM, Tcase 125° VDRM, 125° gate open From VDRM IT(AV) Gate source 30V, 0.5µs, 125°
Repetitive 50Hz Non-repetitive
Min.
Max. 1500
Units V/µs A/µs A/µs
VT(TO)
Threshold voltage level Threshold voltage High level
100A 1000A Tcase 125° 1000A 3500A Tcase 125° 100A 1000A Tcase 125° 1000A 3500A Tcase 125° VDRM, gate source 30V, 0.5µs,
0.826 1.000 0.5913 0.4115
On-state slope resistance level On-state slope resistance High level
Delay time
Turn-off time
125° 200V, dI/dt 1A/µs, dVDR/dt 20V/µs linear
Stored charge Latching current Holding current
2000A, 125° dI/dt 1A/µs, RG-K 500A,
1800
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DCR1350F42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS RATINGS
Symbol
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM Tcase VDRM, Tcase 125° VDRM Tcase VDRM Tcase
Max.
Units
CURVES
4000
Instantaneous on-state current
125° 125° 3000
2000
1000
Instantaneous on-state voltage
Fig.2 Maximum minimum on-state characteristics
VEQUATION (IT) C.IT+D.
Where
0.343382 0.091820 0.000337 0.003026 these values valid 125° 100A 3500A
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DCR1350F42
SEMICONDUCTOR
Maximum case temperature, case
1000 1500 2000
Mean power dissipation (kW)
1000 2000 3000 4000
2500
Mean on-state current, IT(AV)
Mean on-state current, IT(AV)
Fig.3 On-state power dissipation sine wave
Fig.4 Maximum permissible case temperature, double side cooled sine wave
Maximum heatsink temperature, Heatsink
1000 1500 2000
Mean power dissipation (kW)
1000 2000 3000 4000 5000 d.c.
Mean on-state current, IT(AV)
Mean on-state current, IT(AV)
Fig.5 Maximum permissible heatsink temperature, double side cooled sine wave
Fig.6 On-state power dissipation rectangular wave
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DCR1350F42
SEMICONDUCTOR
Maximum permissible case temperature Tcase
d.c.
Maximum heatsik temperature Theatsink
1000 1500 2000
d.c.
1000 1500 2000 2500 3000 3500
2500
3000
Mean on-state current, IT(AV)
Mean on-state current, IT(AV)
Fig.7 Maximum permissible case temperature, double side cooled rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled rectangular wave
2.0345 0.0072774 2.0227 0.0072364 2.104 0.007431 4.8026 0.0546296 4.5436 0.0524941 5.1949 0.0594595 8.8692 0.4673207 6.0443 0.320548 4.0364 0.3929454 1.3748 1.5324 18.6113 5.0367 27.3362 4.2034
Double side cooled
C/kW) C/kW) C/kW)
Anode side cooled
Thermal impedance Zth(j-c) C/kW
Double Side Cooled 0.001 0.01 Anode Cooled Cathode Cooled
Cathode side cooled
1-exp. (t/ti))]
Conduction
Tables show increments thermal resistance th(j-c) when device operates conduction angles other than d.c.
Double side cooling Anode Side Cooling Cathode Sided Cooling
sine. 3.22 3.79 4.43 5.02 5.50 5.72
rect. 2.12 3.12 3.71 4.36 5.10 5.51
sine. 3.23 3.80 4.44 5.04 5.52 5.74
rect. 2.12 3.13 3.72 4.38 5.12 5.53
sine. 3.22 3.79 4.42 5.02 5.49 5.71
rect. 2.12 3.12 3.71 4.36 5.10 5.50
Time Fig.9 Maximum (limit) transient thermal impedance junction case C/kW)
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DCR1350F42
SEMICONDUCTOR
Conditions: Tcase 125° Pulse width 10ms Conditions: Tcase= 125° half-sine wave
Surge current, ITSM (kA)
Surge current, ITSM- (kA)
ITSM
Number cycles Fig.10 Multi-cycle surge current
Pulse width, (ms)
Fig.11 Single-cycle surge current
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DCR1350F42
SEMICONDUCTOR
Pulse Width 1000 10000 Pulse Power (Watts) Frequency
Gate trigger voltage,
Upper Limit
Preferred gate drive area
25oC
-40oC
Lower Limit
Gate trigger current IGT,
Fig12 Gate Characteristics
Lower Limit Upper Limit 100W 150W -40C
Gate trigger voltage,
Gate trigger current,
Fig. Gate characteristics
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DCR1350F42
SEMICONDUCTOR
PACKAGE DETAILS
further package information, please contact Customer Services. dimensions unless stated otherwise. SCALE.
ANGLE PROJECTION
SCALE
DOUBT HOLE 2.00 DEEP BOTH ELECTRODES)
OFFSET (NOM.) GATE TUBE
CATHODE
Device DCR1003SF18 DCR1006SF28 DCR1008SF36 DCR1050SF42 DCR840F48 DCR1020F65 DCR1274SF18 DCR1275SF28 DCR1277SF36 DCR1279SF48 DCR1XXXF22 DCR1640F28 DCR1350F42 DCR1180F52 DCR950F65 DCR810F85
Maximum Minimum Thickness Thickness (mm) (mm) 26.415 25.865 26.49 25.94 26.72 26.17 26.72 26.17 26.84 26.29 27.1 26.55 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 27.1 26.5 27.46 26.91
GATE ANODE
PACKAGE HEIGHT TABLE
Clamping force: 23kN ±10% Lead length: 420mm Lead terminal connector: ring Package outline type code:
Fig.14 Package outline
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DCR1350F42
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY Power Assembly group provide support service those customers requiring more than basic semiconductor, developed flexible range heatsink clamping systems line with advances device voltages current capability semiconductors. offer extensive range liquid cooled assemblies covering full range circuit designs general today. Assembly group offers high quality engineering support dedicated designing units satisfy growing needs customers. Using latest methods team design applications engineers provide Power Assembly Complete Solution (PACs). HEATSINKS Power Assembly group proprietary range extruded aluminium heatsinks which have been designed optimise performance Dynex semiconductors. Data with respect natural, forced liquid cooling (with flow rates) available request. further information device clamps, heatsinks assemblies, please contact your nearest sales representative Customer Services.
Stresses above those listed this data sheet cause permanent damage device. extreme conditions, with semiconductors, this include potentially hazardous rupture package. Appropriate safety precautions should always followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR Doddington Road, Lincoln Lincolnshire, 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION RESALE. PRODUCED UNITED KINGDOM.
This publication issued provide information only which (unless agreed Company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. warranty guarantee express implied made regarding capability, performance suitability product service. Company reserves right alter without prior notice specification, design price product service. Information concerning possible methods provided guide only does constitute guarantee that such methods will satisfactory specific piece equipment. user's responsibility fully determine performance suitability equipment using such information ensure that publication data used date been superseded. These products suitable medical products whose failure perform result significant injury death user. products materials sold services provided subject Company's conditions sale, which available request. brand names product names used this publication trademarks, registered trademarks trade names their respective owners.
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DS5823-1.2 August 2007 (LN25546) Double Side Cooling High Surge C

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