MPSA55 MPSA56 Version 2006-07-25 Power dissipation Verlustleistun
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MPSA55 MPSA56
MPSA55 MPSA56
Version 2006-07-25 Power dissipation Verlustleistung
General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren universellen Einsatz
TO-92 (10D3) 0.18
Plastic case Weight approx. Gewicht
Plastic material classification 94V-0 UL94V-0 klassifiziert Standard packaging taped ammo pack Standard Lieferform gegurtet Ammo-Pack
2.54
Dimensions [mm]
Maximum ratings 25°C) Collector-Emitter-volt. Kollektor-Emitter-Spannung Collector-Base-voltage Kollektor-Basis-Spannung Emitter-Base-voltage Emitter-Basis-Spannung Power dissipation Verlustleistung Collector current Kollektorstrom (dc) Peak Collector current Kollektor-Spitzenstrom Peak Base current Basis-Spitzenstrom Junction temperature Sperrschichttemperatur Storage temperature Lagerungstemperatur open open open VCEO VCBO VEBO Ptot
Grenzwerte 25°C) MPSA55 -55.+150°C -55.+150°C MPSA56
Characteristics 25°C) Min. current gain Base-Emitter voltage Basis-Emitter-Spannung
Kennwerte 25°C) Typ. Max. 0.25
VCEsat MPSA55 MPSA56 ICBO ICBO
Collector-Emitter saturation voltage
Collector-Base cutoff current Kollektor-Basis-Reststrom open) open)
Valid, leads kept ambient temperature distance from case wenn Abstand Umgebungstemperatur gehalten werden Tested with pulses duty cycle Gemessen Impulsen http://www.diotec.com/
Diotec Semiconductor
MPSA55 MPSA56 Characteristics 25°C) Emitter-Base cutoff current Emitter-Basis-Reststrom open) Gain-Bandwidth Product Transitfrequenz Thermal resistance junction ambient Sperrschicht umgebende Luft Recommended complementary transistors Empfohlene NPN-Transistoren RthA MPSA05, MPSA06 IEB0 Kennwerte 25°C) Min. Typ. Max.
Ptot [°C]
Power dissipation versus ambient temperature Verlustleistung Abh. Umgebungstemp.1)
Valid, leads kept ambient temperature distance from case wenn Abstand Umgebungstemperatur gehalten werden http://www.diotec.com/ Diotec Semiconductor
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