BC556 BC559 Version 2006-05-31 Power dissipation Verlustleistung
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BC556 BC559
BC556 BC559
Version 2006-05-31 Power dissipation Verlustleistung
General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren universellen Einsatz
TO-92 (10D3) 0.18
Plastic case Weight approx. Gewicht
Plastic material classification 94V-0 UL94V-0 klassifiziert Standard packaging taped ammo pack Standard Lieferform gegurtet Ammo-Pack
2.54
Dimensions [mm]
Maximum ratings 25°C) BC556 Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation Verlustleistung Collector current Kollektorstrom (dc) Peak Collector current Kollektor-Spitzenstrom Peak Base current Basis-Spitzenstrom Peak Emitter current Emitter-Spitzenstrom Junction temperature Sperrschichttemperatur Storage temperature Lagerungstemperatur Characteristics 25°C) Group current gain Small signal current gain Input impedance Eingangs-Impedanz Output admittance Ausgangs-Leitwert Reverse voltage transfer ratio typ. typ. short open open open VCES VCEO VCBO VEB0 Ptot
Grenzwerte 25°C) BC557 -55.+150°C -55.+150°C Kennwerte 25°C) Group typ. typ. Group typ. typ. BC558/559
h-Parameters at/bei typ. typ. 1.5*10-4 typ. .8.5 typ. 2*10-4 typ. typ. 3*10-4
Valid, leads kept ambient temperature distance from case wenn Abstand Umgebungstemperatur gehalten werden http://www.diotec.com/
Diotec Semiconductor
BC556 BC559 Characteristics 25°C) Min. Collector-Emitter cutoff current Kollektor-Emitter-Reststrom (B-E short) (B-E short) (B-E short) 125°C, (B-E short) 125°C, (B-E short) 125°C, (B-E short) Base-Emitter-voltage Basis-Emitter-Spannung Gain-Bandwidth Product Transitfrequenz Collector-Base Capacitance Emitter-Base Capacitance Noise figure Rauschzahl kHz, BC556 BC558 BC559 RthA BC546 BC549 BC556A BC557A BC558A BC556B BC557B BC558B BC559B BC557C BC558C BC559C CEB0 CCBO BC546 BC547 BC548 BC549 BC546 BC547 BC548 BC549 ICES ICES ICES ICES ICES ICES VCEsat VCEsat VBEsat VBEsat Kennwerte 25°C) Typ. Max.
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Thermal resistance junction ambient Sperrschicht umgebende Luft Recommended complementary transistors Empfohlene NPN-Transistoren Available current gain groups type Lieferbare
Tested with pulses duty cycle Gemessen Impulsen Valid, leads kept ambient temperature distance from case wenn Abstand Umgebungstemperatur gehalten werden http://www.diotec.com/ Diotec Semiconductor
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