SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS 0.1

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SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS 0.1

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ZXMP3F30FH
SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET
Summary V(BR)DSS
0.140 VGS= -4.5V
RDS(on)
0.080 VGS= -10V
-4.0
Description This generation Trench MOSFET from Zetex been designed minimize on-state resistance (RDS(on)) maintain superior switching performance. Features
on-resistance Fast switching speed 4.5V gate drive capability Thermally enhanced SOT23 package
Applications
Power management Portable Equipment Battery charging
Ordering information
Device Reel size (inches) Tape width (mm) Quantity reel
ZXMP3F30FHTA Device marking
3,000 Pinout view
Issue August 2008
Diodes Incorporated
www.zetex.com www.diodes.com
ZXMP3F30FH
Absolute Maximum Ratings
Absolute maximum ratings
Parameter
Drain-Source voltage Gate-Source voltage Continuous Drain current VGS= -10V; TA=25°C VGS= -10V; TA=70°C VGS= -10V; TA=25°C VGS= -10V; TL=25°C Pulsed Drain current
Symbol
VDSS
Limit
Unit
-3.4 -2.7 -2.8 -4.0
Tstg
-15.3 -15.3 0.95 11.2 1.96 15.7
mW/°C mW/°C mW/°C
Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation =25°C Linear derating factor Power dissipation =25°C Linear derating factor Power dissipation =25°C Linear derating factor
Operating storage temperature range
Thermal resistance
Parameter
Junction ambient Junction ambient Junction lead
Symbol
Value
63.77
Unit
°C/W °C/W °C/W
NOTES:
device surface mounted 25mm 25mm 1.6mm with high coverage single sided copper, still conditions. Mounted measured sec. Repetitive rating 25mm 25mm PCB, D=0.02, pulse width 300us pulse width limited maximum junction temperature. Thermal resistance from junction solder-point drain lead).
Issue August 2008
Diodes Incorporated
www.zetex.com www.diodes.com
ZXMP3F30FH
Thermal Characteristics
Drain Current
Limit
Power Dissipation
RDS(on)
25mm 25mm
100ms 10ms amb=25°C 25mm 25mm 100µs
100m
100m
-VDS Drain-Source Voltage
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse amb=25°C 25mm 25mm
Thermal Resistance (°C/W)
25mm 25mm D=0.5
Power Dissipation
amb=25°C
D=0.2 100µ 100m
D=0.1 D=0.05 Single Pulse
100µ 100m
Pulse Width
Pulse Width
Transient Thermal Impedance
Pulse Power Dissipation
Issue August 2008
Diodes Incorporated
www.zetex.com www.diodes.com
ZXMP3F30FH
Electrical characteristics Tamb 25°C unless otherwise stated)
Parameter Static
Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source on-state resistance Forward Transconductance Dynamic
Symb
V(BR)DSS IDSS IGSS VGS(th) RDS(on)
Min.
Typ.
Max.
Unit Conditions
-1.0 -1.0 0.080 0.140
-250A, VGS=0V VDS=-30V, VGS=0V VGS=±20V, VDS=0V -250A, VDS=VGS VGS= -10V, -2.5A VGS= -4.5V, -1.9A VDS= -15V,
Input capacitance Output capacitance Reverse transfer capacitance Switching
Ciss Coss Crss
VDS= -15V, VGS=0V f=1MHz
Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time
td(on) td(off)
VDS= -15V, VGS= -10V VDD= -15V, VGS= -10V 6.0,
-0.80 14.6
-1.2
-1.7A,VGS=0V -1.5A,di/dt=100A/s
Reverse recovery charge
NOTES:
Measured under pulsed conditions. Pulse width 300s; duty cycle ()Switching characteristics independent operating junction temperature. ()For design only, subject production testing
Issue August 2008
Diodes Incorporated
www.zetex.com www.diodes.com
ZXMP3F30FH
Typical Characteristics
4.5V
150°C
4.5V 3.5V
Drain Current
Drain Current
3.5V
2.5V
25°C
0.01
0.01
-VDS Drain-Source Voltage
-VDS Drain-Source Voltage
Output Characteristics
Output Characteristics
RDS(on)
Normalised RDS(on) VGS(th)
Drain Current
150°C
25°C
250uA
VGS(th)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance
-VGS Gate-Source Voltage
Junction Temperature (°C)
Normalised Curves Temperature
150°C
25°C
-ISD Reverse Drain Current
3.5V
4.5V
25°C
0.01
On-Resistance Drain Current
Drain Current
1E-3
-VSD Source-Drain Voltage Source-Drain Diode Forward Voltage
Issue August 2008
Diodes Incorporated
www.zetex.com www.diodes.com
ZXMP3F30FH
Typical Characteristics
-VGS Gate-Source Voltage
Capacitance (pF)
CISS COSS CRSS
1MHz
-VDS Drain Source Voltage Capacitance Drain-Source Voltage
Charge (nC)
Gate-Source Voltage Gate Charge
Test Circuits
Issue August 2008
Diodes Incorporated
www.zetex.com www.diodes.com
ZXMP3F30FH
Packaging Details SOT23
Issue August 2008
Diodes Incorporated
www.zetex.com www.diodes.com
ZXMP3F30FH
Definitions Product change Diodes Zetex Semiconductors reserves right alter, without notice, specifications, design, price conditions supply product service. Customers solely responsible obtaining latest relevant information before placing orders. Applications disclaimer circuits this design/application note offered design ideas. responsibility user ensure that circuit user's application meets with user's requirements. representation warranty given liability whatsoever assumed Diodes Inc. with respect accuracy such information, infringement patents other intellectual property rights arising from such otherwise. Diodes Inc. does assume legal responsibility will held legally liable (whether contract, tort (including negligence), breach statutory duty, restriction otherwise) damages, loss profit, business, contract, opportunity consequential loss these circuit applications, under circumstances. Life support Diodes Inc. products specifically authorized critical components life support devices systems without express written approval Chief Executive Officer Diodes Incorporated. used herein: Life support devices systems devices systems which: intended implant into body support sustain life whose failure perform when properly used accordance with instructions provided labeling reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device affect safety effectiveness. Reproduction product specifications contained this publication issued provide outline information only which (unless agreed company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. Terms Conditions products sold subjects Diodes Zetex terms conditions sale, this disclaimer (save event conflict between when terms contract shall prevail) according region, supplied time order acknowledgement. latest information technology, delivery terms conditions prices, please contact your nearest Diodes Zetex sales office. Quality product Diodes Zetex 9001 TS16949 certified semiconductor manufacturer. ensure quality service products strongly advise purchase parts directly from Diodes Zetex Semiconductors regionally authorized distributors. complete listing authorized distributors please visit: www.zetex.com www.diodes.com Diodes Incorporated does warrant accept liability whatsoever respect parts purchased through unauthorized sales channels. (Electrostatic discharge) Semiconductor devices susceptible damage ESD. Suitable precautions should taken when handling transporting devices. possible damage devices depends circumstances handling transporting, nature device. extent damage vary from immediate functional parametric malfunction degradation function performance over time. Devices suspected being affected should replaced. Green compliance Diodes Zetex Semiconductors committed environmental excellence aspects operations which includes meeting exceeding regulatory requirements with respect hazardous substances. Numerous successful programs have been implemented reduce hazardous substances and/or emissions. Diodes Zetex components compliant with RoHS directive, through this supporting customers their compliance with WEEE directives. Product status key: "Preview" Future device intended production some point. Samples available "Active" Product status recommended designs "Last time (LTB)" Device will discontinued last time period delivery effect "Not recommended designs" Device still production support existing designs production "Obsolete" Production been discontinued Datasheet status key: "Draft version" This term denotes very early datasheet version contains highly provisional information, which change manner without notice. "Provisional version" This term denotes pre-release datasheet. provides clear indication anticipated performance. However, changes test conditions specifications occur, time without notice. "Issue" This term denotes issued datasheet containing finalized specifications. However, changes specifications occur, time without notice.
Zetex sales offices Europe Zetex GmbH Kustermann-park D-81541 Germany Telefon: (49) Fax: (49) europe.sales@zetex.com Americas Zetex Veterans Memorial Highway Hauppauge, 11788 Telephone: 2222 Fax: 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia Ltd) 3701-04 Metroplaza Tower Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 Fax: (852) 24250 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 Dallas Parkway Suite Dallas, TX75248,
www.diodes.com
2008 Published Diodes Incorporated
Issue August 2008
Diodes Incorporated
www.zetex.com www.diodes.com

SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS 0.1

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