DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS 0.15

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS 0.15

Datasheet Thumbnail

Top Searches for this datasheet

ZXMN6A08K
DPAK N-channel enhancement mode MOSFET
Summary V(BR)DSS
0.150 VGS= 4.5V
RDS(on)
0.080 VGS=
18.2 13.3
Description This generation Trench MOSFET from Zetex features unique structure combining benefits on-resistance fast switching, making ideal high efficiency power management applications. Features
on-resistance Fast switching speed gate drive DPAK package
Applications
DC-DC Converters Power Management functions Disconnect switches Motor control
Ordering information
Device Reel size (inches) Tape width (mm) Quantity reel
ZXMN6A08KTC Device marking
ZXMN 6A08
2,500
Pinout view
Issue December 2008
Diodes Incorporated, 2008
www.zetex.com www.diodes.com
ZXMN6A08K
Absolute maximum ratings
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=10V; TC=25°C VGS=10V; TC=100°C Continuous Drain Current VGS=10V; TA=25°C VGS=10V; TA=70°C VGS=10V; TA=25°C Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation =25°C Linear Derating Factor Power Dissipation =25°C Linear Derating Factor Power Dissipation =25°C Linear Derating Factor Operating Storage Temperature Range Tstg SYMBOL VDSS LIMIT 18.2 11.5 24.3 24.3 32.8 9.25 2.11 16.8 +150 mW/°C mW/°C mW/°C UNIT
Thermal resistance
PARAMETER Junction Ambient Junction Ambient Junction Ambient Junction Case SYMBOL VALUE 30.5 14.0 59.1 2.77 UNIT °C/W °C/W °C/W °C/W
NOTES
device surface mounted 50mm 50mm 1.6mm with high coverage single sided copper, still conditions. device surface mounted measured sec. Repetitive rating 50mm 50mm 1.6mm PCB, D=0.02 pulse width=300s pulse width limited maximum junction temperature. device surface mounted 25mm 25mm 1.6mm with high coverage single sided copper, still conditions. terms case case temperature refer exposed metal back face package drain pin.
Issue December 2008
Diodes Incorporated, 2008
www.zetex.com www.diodes.com
ZXMN6A08K
Thermal characteristics
Drain Current
100ms 10ms amb=25°C 25mm 25mm 100µs
Drain Current
Limit
RDS(on)
RDS(on)
Limit
100ms 10ms amb=25°C 50mm 50mm 100µs
100m
100m
Drain-Source Voltage
Safe Operating Area
amb=25°C
Safe Operating Area
Drain-Source Voltage
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
25mm 25mm D=0.5
100µ
Tamb=25°C 50mm 50mm D=0.5
100µ 100m
D=0.2 D=0.1 D=0.05 Single Pulse
D=0.2
D=0.1 D=0.05 Single Pulse
100m
Pulse Width
Pulse Width
Transient Thermal Impedance
Transient Thermal Impedance
Power Dissipation
Power Dissipation
Single Pulse Tamb=25°C 50mm 50mm
50mm 50mm 25mm 25mm
25mm 25mm
100µ
100m
Pulse Width
Temperature (°C)
Pulse Power Dissipation
Derating Curve
Issue December 2008
Diodes Incorporated, 2008
www.zetex.com www.diodes.com
ZXMN6A08K
Electrical characteristics Tamb 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
V(BR)DSS IDSS IGSS VGS(th) RDS(on)
0.080 0.150
250A, VGS=0V VDS= 60V, VGS=0V VGS=±20V, VDS=0V 250A, VDS=VGS VGS= 10V, 4.8A VGS= 4.5V, 4.2A VDS= 15V, 4.8A
Forward Transconductance DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge
Ciss Coss Crss
44.2 24.1
VDS= 40V, VGS=0V f=1MHz
td(on) td(off)
12.3
VDD= 30V, 1.5A RG6.0, VGS=
VDS= 30V, VGS= 1.4A
Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage
VDS= 30V, VGS= 1.4A
0.88
0.95
Tj=25°C, VGS=0V
Reverse Recovery Time Reverse Recovery Charge
19.2 30.3
Tj=25°C, 1.4A, di/dt=100A/s
Measured under pulsed conditions. Pulse width 300s; duty cycle Switching characteristics independent operating junction temperature. design only, subject production testing.
Issue December 2008
Diodes Incorporated, 2008
www.zetex.com www.diodes.com
ZXMN6A08K
Typical Characteristics
25°C
4.5V 3.5V
150°C
3.5V
Drain Current
Drain Current
2.5V
0.01
Drain-Source Voltage
Drain-Source Voltage
Output Characteristics
Output Characteristics
Normalised RDS(on) VGS(th)
4.8A RDS(on)
Drain Current
150°C
25°C
VGS(th) 250uA
0.01
Gate-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance
Normalised Curves Temperature
Reverse Drain Current
3.5V
4.5V
150°C
25°C
25°C
0.01
Drain Current
On-Resistance Drain Current
Source-Drain Voltage Source-Drain Diode Forward Voltage
Issue December 2008
Diodes Incorporated, 2008
www.zetex.com www.diodes.com
ZXMN6A08K
Typical characteristics
Gate-Source Voltage
Capacitance (pF)
1.4A
1MHz CISS COSS CRSS
Drain Source Voltage Capacitance Drain-Source Voltage
Charge (nC) Gate-Source Voltage Gate Charge
Issue December 2008
Diodes Incorporated, 2008
www.zetex.com www.diodes.com
ZXMN6A08K
Packaging details DPAK
Surface mounted, package
Inches 0.086 0.020 0.030 0.205 0.018 0.018 0.213 0.205 0.250 0.170 0.094 0.005 0.035 0.045 0.215 0.024 0.023 0.245 0.265
Millimeters 2.18 0.508 0.762 5.21 0.457 0.457 5.41 5.21 6.35 4.32 2.39 0.127 0.89 1.14 5.46 0.61 0.584 6.22 6.73
Inches 0.370 0.055 0.410 0.070 0.090
Millimeters 9.40 1.40 10.41 1.78 2.29
0.108 0.020 0.035 0.025 0.045 0.065 0.040 0.060
2.74 0.508 0.89 0.635 1.14 1.65 1.016 1.52
Note: Controlling dimensions inches. Approximate dimensions provided millimeters
Issue December 2008
Diodes Incorporated, 2008
www.zetex.com www.diodes.com
ZXMN6A08K
Definitions Product change Diodes Incorporated reserves right alter, without notice, specifications, design, price conditions supply product service. Customers solely responsible obtaining latest relevant information before placing orders. Applications disclaimer circuits this design/application note offered design ideas. responsibility user ensure that circuit user's application meets with user's requirements. representation warranty given liability whatsoever assumed Diodes Inc. with respect accuracy such information, infringement patents other intellectual property rights arising from such otherwise. Diodes Inc. does assume legal responsibility will held legally liable (whether contract, tort (including negligence), breach statutory duty, restriction otherwise) damages, loss profit, business, contract, opportunity consequential loss these circuit applications, under circumstances. Life support Diodes Zetex products specifically authorized critical components life support devices systems without express written approval Chief Executive Officer Diodes Incorporated used herein: Life support devices systems devices systems which: intended implant into body support sustain life whose failure perform when properly used accordance with instructions provided labeling reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device affect safety effectiveness. Reproduction product specifications contained this publication issued provide outline information only which (unless agreed company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. Terms Conditions products sold subjects Diodes Inc. terms conditions sale, this disclaimer (save event conflict between when terms contract shall prevail) according region, supplied time order acknowledgement. latest information technology, delivery terms conditions prices, please contact your nearest Zetex sales office. Quality product Diodes Zetex Semiconductors Limited 9001 TS16949 certified semiconductor manufacturer. ensure quality service products strongly advise purchase parts directly from Zetex Semiconductors regionally authorized distributors. complete listing authorized distributors please visit: www.zetex.com www.diodes.com Diodes Inc. does warrant accept liability whatsoever respect parts purchased through unauthorized sales channels. (Electrostatic discharge) Semiconductor devices susceptible damage ESD. Suitable precautions should taken when handling transporting devices. possible damage devices depends circumstances handling transporting, nature device. extent damage vary from immediate functional parametric malfunction degradation function performance over time. Devices suspected being affected should replaced. Green compliance Diodes Inc. committed environmental excellence aspects operations which includes meeting exceeding regulatory requirements with respect hazardous substances. Numerous successful programs have been implemented reduce hazardous substances and/or emissions. Diodes Zetex components compliant with RoHS directive, through this supporting customers their compliance with WEEE directives. Product status key: "Preview" Future device intended production some point. Samples available "Active" Product status recommended designs "Last time (LTB)" Device will discontinued last time period delivery effect "Not recommended designs" Device still production support existing designs production "Obsolete" Production been discontinued Datasheet status key: "Draft version" This term denotes very early datasheet version contains highly provisional information, which change manner without notice. "Provisional version" This term denotes pre-release datasheet. provides clear indication anticipated performance. However, changes test conditions specifications occur, time without notice. "Issue" This term denotes issued datasheet containing finalized specifications. However, changes specifications occur, time without notice.
Sales offices
Americas
3050 Hillcrest Drive Westlake Village, 91362-3154 Tel: (+1) 4800 Fax: (+1) 4850
Europe
Kustermannpark D-81541 Germany Tel: (+49) Fax: (+49) 4949
Taiwan
Chuan Road Hsin-Tien Taipei, Taiwan Tel: (+886) Fax: (+886)
Shanghai
606, No.1158 Changning Road Shanghai, China Tel: (+86) 4882 (+86) 4891
Shenzhen
Room A1103-04, ANLIAN Plaza, #4018 Jintian Road Futian CBD, Shenzhen, China Tel: (+86) Fax: (+86)
Korea
Floor, Changhwa B/D, 1005-5 Yeongtong-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea 443-813 Tel: (+82) Fax: (+82)
Issue December 2008
Diodes Incorporated, 2008
www.zetex.com www.diodes.com

DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS 0.15

Top Searches for this datasheet

Other recent searches