Servo motor control. Power MOSFET gate drivers. Other switching applic
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VOLTAGE Volts
Servo motor control. Power MOSFET gate drivers. Other switching applications.
CHM1012LPAPT
CURRENT Ampere
FEATURE
Small package. (TO-252A) Super high dense cell design extremely RDS(ON). High power current handing capability.
.280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95)
TO-252A
.094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45)
N-Channel Enhancement
.417 (10.6) .346 (8.80)
CONSTRUCTION
.261 (6.63) .213 (5.40)
.035 (0.90) .025 (0.64)
.102 (2.59) .078 (1.98)
Gate
.024 (0.61) .016 (0.40)
CIRCUIT
Source Drain( Heat Sink
Dimensions inches (millimeters)
TO-252A
Absolute Maximum Ratings
Symbol Parameter
25°C unless otherwise noted
CHM1012LPAPT
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous
Pulsed TSTG
(Note
Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
Note Surface Mounted Board <=10sec Pulse Test Pulse width 300us Duty Cycle Repetitive Rating Pulse width linited maximum junction temperature Guaranteed design subject production trsting
Thermal characteristics
Thermal Resistance, Junction-to-Ambient (Note °C/W
2006-02
RATING CHARACTERISTIC CURVES CHM1012LPAPT
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Conditions
Units
CHARACTERISTICS
BVDSS IDSS GSSF GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
20V,VDS -20V,
+100 -100
CHARACTERISTICS
(Note
VGS(th) RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance
VGS, VGS=10V, ID=10A =10V,
SWITCHING CHARACTERISTICS (Note
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=96V, ID=10A VGS=5V =10A RGEN=
27.5
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 0.85
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