CHDTD123TKPT CURRENT mAmpere FEATURE Small surface moun
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CHDTD123TKPT
CURRENT mAmpere
FEATURE
Small surface mounting type. (SOT-23) High current gain. Suitable high packing density. colloector-emitter saturation. High saturation current capability. Internal isolated transistors package. Built single resistor(R1=2.2k, Typ.
SOT-23
.041 (1.05) .033 (0.85)
.110 (2.80) .082 (2.10)
.066 (1.70)
.119 (3.04)
CONSTRUCTION
transistors bias thin-film resistors package.
.055 (1.40) .047 (1.20)
.103 (2.64) .086 (2.20)
.028 (0.70) .020 (0.50)
.007 (0.177)
.018 (0.30) .002 (0.05)
Emitter
Base
CIRCUIT
.045 (1.15) .033 (0.85)
Collector
.019 (0.50)
Dimensions inches (millimeters)
SOT-23
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) TSTG RJ-S Note Transistor mounted printed-circuit board.
2003-06
PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance Note
CONDITIONS Tamb Note
VALUE
UNIT
+150 +150 junction soldering point
RATING CHARACTERISTIC CHDTD123TKPT
CHARACTERISTICS Tamb unless otherwise SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) PARAMETER
Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage
CONDITIONS IC=50uA IE=50uA VCB=50V VEB=4V IC/IB=50mA/2.5mA IC=50mA; VCE=5.0V IE=-50mA, VCE=10.0V f=100MHz
MIN. 1.54
TYP.
MAX.
UNIT
Collector-emitter breakdown voltage IC=1.0mA
2.86
current gain Input resistor Transition frequency
Note 1.Pulse test: tp300uS; 0.02.
RATING CHARACTERISTIC CURVES CHDTD123TKPT
Typical Electrical Characteristics
Fig.1 current gain collector current
COLLECsaturationTOR VOLTAGE VCE(sat)
CURRENT GAIN
Fig.2 Collector-emitter voltage collector current
500m 200m 100m 500u 100m 200m 500m Ta=100OC 25OC lO/lI=20
500u 100m 200m 500m Ta=100OC 25OC -40OC
COLLECTOR CURRENT (uA)
COLLECTOR CURRENT (uA)
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