CHDTD114GKPT CURRENT FEATURE Small surface mounting typ
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CHDTD114GKPT
CURRENT
FEATURE
Small surface mounting type. (SC-59/SOT-346) High current gain. Suitable high packing density. colloector-emitter saturation. High saturation current capability. Internal isolated transistors package. Built bias resistor(R1=10k, Typ.
SC-59/SOT-346
0.95 2.7~3.1 0.95
1.7~2.1
CONSTRUCTION
transistors bias thin-film resistors package.
0.3~0.51 1.2~1.9
MARKING
Emitter Base
0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 0~0.1
CIRCUIT
Collector
Dimensions millimeters
SC-59/SOT-346
LIMITING VALUES accordance with Absolute Maximum Rating System SYMBOL VCBO VCEO VEBO IC(Max.) TSTG RJ-S Note Transistor mounted printed-circuit board.
2003-12
PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance Note
CONDITIONS Tamb Note
VALUE
UNIT
+150 +150 junction soldering point
RATING CHARACTERISTIC CHDTD114GKPT
CHARA CTERISTICS Tamb unless otherwise MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current current gain Input resistor Transition frequency CONDITIONS IC=50uA IE=720uA IC=50mA; IB=2.5mA VCB=50V VEB=4V IC=100mA; VCE=5.0V IE=-50mA, VCE=10.0V f=100MHz MIN. 50.0 50.0 MAX. UNIT
Collector-Emitter breakdown voltage IC=1mA
1.Pulse test: tp300uS; 0.02.
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