CHDTC114GKPT CURRENT FEATURE Small surface mounting typ

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CHDTC114GKPT CURRENT FEATURE Small surface mounting typ

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CHDTC114GKPT
CURRENT
FEATURE
Small surface mounting type. (SOT-23) High current gain. Suitable high packing density. colloector-emitter saturation. High saturation current capability. Internal isolated transistors package. Built bias resistor(R1=10k, Typ.
SOT-23
.041 (1.05) .033 (0.85)
.110 (2.80) .082 (2.10)
.066 (1.70)
.119 (3.04)
CONSTRUCTION
transistors bias thin-film resistors package.
.055 (1.40) .047 (1.20)
.103 (2.64) .086 (2.20)
.028 (0.70) .020 (0.50)
.007 (0.177)
.018 (0.30) .002 (0.05)
Emitter
Base
CIRCUIT
.045 (1.15) .033 (0.85)
.019 (0.50)
Collector
Dimensions inches (millimeters)
SOT-23
LIMITING VALUES accordance with Absolute Maximum Rating System SYMBOL VCBO VCEO VEBO IC(Max.) TSTG RJ-S Note Transistor mounted printed-circuit board.
2003-12
PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance Note
CONDITIONS Tamb Note
VALUE
UNIT
+150 +150 junction soldering point
RATING CHARACTERISTIC CHDTC114GKPT
CHARA CTERISTICS Tamb unless otherwise MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current current gain Input resistor Transition frequency CONDITIONS IC=50uA IE=720uA IC=10mA; IB=0.5mA VCB=50V VEB=4V IC=5mA; VCE=5.0V IE=-5mA, VCE=10.0V f=100MHz MIN. 50.0 50.0 MAX. UNIT
Collector-Emitter breakdown voltage IC=1mA
1.Pulse test: tp300uS; 0.02.

CHDTC114GKPT CURRENT FEATURE Small surface mounting typ

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