CHDTB123TKPT CURRENT FEATURE Small surface mounting typ
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CHDTB123TKPT
CURRENT
FEATURE
Small surface mounting type. (SOT-23) High current gain. Suitable high packing density. colloector-emitter saturation. High saturation current capability. Internal isolated transistors package. Built bias resistor(R1=2.2k, Typ.
SOT-23
.041 (1.05) .033 (0.85)
.110 (2.80) .082 (2.10)
.066 (1.70)
.119 (3.04)
CONSTRUCTION
transistors bias thin-film resistors package.
.055 (1.40) .047 (1.20)
.103 (2.64) .086 (2.20)
.028 (0.70) .020 (0.50)
.007 (0.177)
.018 (0.30) .002 (0.05)
CIRCUIT
.045 (1.15) .033 (0.85)
.019 (0.50)
Dimensions inches (millimeters)
SOT-23
LIMITING VALUES accordance with Absolute Maximum Rating System SYMBOL VCBO VCEO VEBO TSTG RJ-S Note Transistor mounted printed-circuit board.
2003-12
PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance Note
CONDITIONS
VALUE
UNIT
-500 Tamb Note +150 +150 junction soldering point
RATING CHARACTERISTIC CHDTB123TKPT
CHARA CTERISTICS Tamb unless otherwise MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current current gain Input resistor Transition frequency CONDITIONS -50uA -50uA -50mA; -2.5mA VCB= -50V VEB= -50mA; VCE= -5.0V IE=50mA, VCE= -10.0V f=100MHz MIN. -50.0 -40.0 -5.0 1.54 -0.3 -0.5 -0.5 2.86 MAX. UNIT
Collector-Emitter breakdown voltage -1mA
1.Pulse test: tp300uS; 0.02.
RATING CHARACTERISTIC CURVES CHDTB123TKPT
Typical Electrical Characteristics
CURRENT GAIN
COLLECTOR SATURATION VOLTAGE VCE(sat)
Fig.1 current gain collector current
VCE=-5V
Fig.2 Collector-emitter saturation voltage collector current
-500m -200m -100m -50m -20m -10m -500u -10m -100m -500m 100OC 25OC lC/lB=20
-500u -10m -100m -500m Ta=100OC 25OC -40OC
COLLECTOR CURRENT
COLLECTOR CURRENT
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