CHDTA114TKPT CURRENT FEATURE Small surface mounting typ
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CHDTA114TKPT
CURRENT
FEATURE
Small surface mounting type. (SC-59/SOT-346) High current gain. Suitable high packing density. colloector-emitter saturation. High saturation current capability. Internal isolated transistors package. Built bias resistor(R1=10k, Typ.
SC-59/SOT-346
0.95 2.7~3.1 0.95
1.7~2.1
CONSTRUCTION
transistors bias thin-film resistors package.
0.3~0.51 1.2~1.9
MARKING
0.085~0.2
0.89~1.3 0.3~0.6 2.1~2.95 0~0.1
CIRCUIT
Dimensions millimeters
SC-59/SOT-346
LIMITING VALUES accordance with Absolute Maximum Rating System SYMBOL VCBO VCEO VEBO TSTG RJ-S Note Transistor mounted printed-circuit board.
2003-12
PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance Note
CONDITIONS
VALUE
UNIT
-100 Tamb Note +150 +150 junction soldering point
RATING CHARACTERISTIC CHDTA114TKPT
CHARA CTERISTICS Tamb unless otherwise MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current current gain Input resistor Transition frequency CONDITIONS -50uA -50uA -10mA; -1mA VCB= -50V VEB= -1mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz MIN. -50.0 -50.0 -5.0 -0.3 -0.5 -0.5 MAX. UNIT
Collector-Emitter breakdown voltage -1mA
1.Pulse test: tp300uS; 0.02.
RATING CHARACTERISTIC CURVES CHDTA114TKPT
Typical Electrical Characteristics
CURRENT GAIN
COLLECTOR SATURATION VOLTAGE VCE(sat)
Fig.1 current gain collector current
VCE=-5V
Fig.2 Collector-emitter saturation voltage collector current
-500m -200m -100m -50m -20m -10m -100u -500u -10m -50m -100m 25OC
lC/lB=10
-100u -10m -50m -100m Ta=100OC 25OC -40OC
COLLECTOR CURRENT
COLLECTOR CURRENT
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