CHDTA113TUPT CURRENT FEATURE Small surface mounting typ
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CHDTA113TUPT
CURRENT
FEATURE
Small surface mounting type. (SC-70/SOT-323) High current gain. Suitable high packing density. colloector-emitter saturation. High saturation current capability. Internal isolated transistors package. Built bias resistor(R1=1.0k, Typ.
SC-70/SOT-323
1.3±0.1 0.3±0.1
0.65 2.0±0.2 0.65
CONSTRUCTION
transistors bias thin-film resistors package.
1.25±0.1
MARKING
0.05~0.2
0.8~1.1 0~0.1 2.0~2.45
0.1Min.
CIRCUIT
Dimensions millimeters
SC-70/SOT-323
LIMITING VALUES accordance with Absolute Maxim Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) TSTG RJ-S Note Transistor mounted printed-circuit board. PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance Note junction soldering point Tamb Note CONDITIONS -100 +150 +150 VALUE
UNIT
2005-06
RATING CHARACTERISTIC CHDTA113TUPT
CHARA CTERISTICS Tamb unless otherwise MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current current gain Input resistor Transition frequency CONDITIONS -50uA -50uA -5mA; -0.25mA VCB= -50V VEB= -1mA; VCE= -5.0V IE=5mA, VCB= -10.0V f=100MHz MIN. -50.0 -50.0 -5.0 -0.3 -0.5 -0.5 MAX. UNIT
Collector-Emitter breakdown voltage -1mA
1.Pulse test: tp300uS; 0.02.
RATING CHARACTERISTIC CURVES CHDTA113TUPT
Typical Electrical Characteristics
CURRENT GAIN
COLLECTOR SATURATION VOLTAGE VCE(sat)
Fig.1 current gain collector current
VCE=-5V Ta=100OC 25OC
Fig.2 Collector-emitter saturation voltage collector current
-500m -200m -100m -50m -20m -10m -100u -500u -10m -50m -100m 100OC 25OC lC/lB=10
-100 -500
-10m
-50m -100m
COLLECTOR CURRENT
COLLECTOR CURRENT
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