High Speed Switching Diode Chip PROCESS DETAILS Process Size Thic
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CPD83V
High Speed Switching Diode Chip
PROCESS DETAILS Process Size Thickness Anode Bonding Area Side Metalization Back Side Metalization EPITAXIAL PLANAR MILS 7.1MILS MILS Au-As
Geometry GROSS INCH WAFER
89,376
PRINCIPAL DEVICE TYPES CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2838 CMPD7000
BACKSIDE CATHODE
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(5-September 2008)
CPD83V
Typical Electrical Characteristics
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(5-September 2008)
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