High Voltage Switching Diode Chip PROCESS DETAILS Process Size Th
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CPD80V
High Voltage Switching Diode Chip
PROCESS DETAILS Process Size Thickness Anode Bonding Area Side Metalization Back Side Metalization EPITAXIAL PLANAR MILS MILS MILS Au.As
GEOMETRY GROSS INCH WAFER 42,040 PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 BACKSIDE CATHODE Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(8-October 2008)
CPD80V
Typical Electrical Characteristics
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(8-October 2008)
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