Leakage Diode Leakage Diode Chip PROCESS DETAILS Process Siz
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CPD64
Leakage Diode
Leakage Diode Chip
PROCESS DETAILS Process Size Thickness Anode Bonding Area Side Metalization Back Side Metalization EPITAXIAL PLANAR 17.5 17.5 MILS MILS MILS DIAMETER
GEOMETRY GROSS INCH WAFER 34,368 PRINCIPAL DEVICE TYPES CMPD3003 1N3595
BACKSIDE CATHODE
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(8-October 2008)
CPD64
Typical Electrical Characteristics
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(8-October 2008)
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