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VCE(SAT) Transistor Chip PROCESS DETAILS Process Size Thickness B


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CP741V
VCE(SAT) Transistor Chip
PROCESS DETAILS Process Size Thickness Base Bonding Area Emitter Bonding Area Side Metalization Back Side Metalization Geometry GROSS INCH WAFER 54,330 PRINCIPAL DEVICE TYPES CMLT7410 CMPT7410 CMST7410 CMUT7410 Epitaxial Planar MILS MILS MILS MILS Al/Si
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(12-August 2008)
CP741V
Typical Electrical Characteristics
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
(12-August 2008)

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