Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devi

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Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devi

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CMLT3904E CMLT3904EG* CMLT3906E CMLT3906EG* CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiSILICON TRANSISTORS
Semiconductor Corp.
DESCRIPTION: These CENTRAL SEMICONDUCTOR devices combinations dual, enhanced specification transistors space saving SOT-563 package, designed small signal general purpose amplifier switching applications. MARKING CODES: CMLT3904E: CMLT3906E: CMLT3946E: CMLT3904EG*: CMLT3906EG*: CMLT3946EG*:
Device Halogen Free design VCE(SAT) from 0.3V 0.2V (NPN) from 0.4V 0.2V (PNP) SYMBOL VCBO VCEO VEBO Tstg UNITS °C/W
SOT-563 CASE
ENHANCED SPECIFICATIONS: BVCBO from (PNP) BVEBO from 5.0V 6.0V (PNP) from (NPN/PNP) MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (Note Power Dissipation (Note Power Dissipation (Note Operating Storage Junction Temperature Thermal Resistance
+150
ELECTRICAL CHARACTERISTICS TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICEV VCE=30V, VEB=3.0V BVCBO IC=10A BVCEO IC=1.0mA BVEBO IE=10A VCE(SAT) IC=10mA, IB=1.0mA 0.057 0.050 0.100 VCE(SAT) IC=50mA, IB=5.0mA 0.100 0.100 0.200 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.75 0.75 0.85 VBE(SAT) IC=50mA, IB=5.0mA 0.85 0.85 0.95 VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA Enhanced Specification Notes: Ceramic aluminum core Board with copper mounting area FR-4 Epoxy Board with copper mounting area FR-4 Epoxy Board with copper mounting area
UNITS
(23-January 2009)
Semiconductor Corp.
CMLT3904E CMLT3904EG* CMLT3906E CMLT3906EG* CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiSILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS TRANSISTOR Continued: (TA=25°C) SYMBOL TEST CONDITIONS VCE=20V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100A, =1.0k f=10Hz 15.7kHz VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
UNITS x10-4
SOT-563 CASE MECHANICAL OUTLINE
LEAD CODE: EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR CMLT3904E CMLT3904EG*
Device Halogen Free design
CMLT3906E CMLT3906EG*
CMLT3946E CMLT3946EG* (23-January 2009)

Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devi

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