Semiconductor Corp. DESCRIPTION: CENTRAL SEMICONDUCTOR BAS28 cons
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BAS28 DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
Semiconductor Corp.
DESCRIPTION: CENTRAL SEMICONDUCTOR BAS28 consists electrically isolated ultra-high speed silicon switching diodes manufactured epitaxial planar process packaged epoxy molded SOT-143 surface mount case. This device designed high speed switching applications. MARKING CODE:
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 Forward Surge Current, tp=1 Forward Surge Current, tp=1 Power Dissipation Operating Storage Junction Temperature Thermal Resistance TJ,Tstg +150 °C/W VRRM IFRM IFSM IFSM IFSM UNITS
ELECTRICAL CHARACTERISTICS DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS VR=25V, TA=150°C VR=75V VR=75V, TA=150°C IF=1.0mA IF=10mA IF=50mA IF=150mA VR=0, f=1.0 IF=IR=10mA, RL=100, Rec. 1.0mA IF=10mA, VR=5.0V, RL=500 IF=10mA, tr=20ns 1.00 1.25 1.75 UNITS
(3-December 2003)
BAS28 DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
Semiconductor Corp.
SOT-143 CASE MECHANICAL OUTLINE
LEAD CODE: CATHODE CATHODE ANODE ANODE MARKING CODE:
(3-December 2003)
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