Parts Affected: Chip process CPD41, High Current Switching Diode discr
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Process Change Notice
Parts Affected: Chip process CPD41, High Current Switching Diode discrete semiconductors, wafers, chip form. Extent Change: overall reduction area. CPD41 chip process currently measures mils being replaced CPD93V chip process which measures 12.8 12.8 mils. Reason Change: accommodate assemblies extremely small surface mount, epoxy molded packages. Effect Change: This change does affect electrical characteristics device. Effective Date Change: Existing inventory will shipped until depleted. Sample Availability: Please contact Salesperson Manufacturer's Representative. Figures: CPD93V Chip Geometry Size: Thickness: Bond Area (Anode): Topside Metal: Backside Metal: 12.8 12.8 mils mils mils Au.As/Au
ANODE
BACKSIDE CATHODE
Page
#109
Notification Date: April 2009
Part Numbers Affected: CPD41-BAS56-WN CPD41-CEN923-CT CPD41-CMPD4150-WR CPD41-CMPD4150-WS CPD41-CMPD914-WN CPD41-1N3600-WN CPD41-1N4148-CT CPD41-1N4150-CT CPD41-1N4150-WN CMPD4150 CMHD4150 BAS56
Page
#109
Notification Date: April 2009
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