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100% Avalanche Test Fast Switching Characteristic Simple Drive Require
Top Searches for this datasheetAP10N70W 100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) 600V Description AP10N70 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications. TO-3P type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching, ruggedized design cost-effectiveness. TO-3P package widely preferred commercial-industrial applications. device suited switch mode power supplies ,DC-AC converters high current high speed switching circuits. TO-3P Absolute Maximum Ratings Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Rating 1.39 Units Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.72 Unit 201022072-1/4 Data specifications subject change without notice AP10N70W Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150 Test Conditions VGS=0V, ID=1.0mA VGS=10V, ID=5.0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10,VGS=10V RD=30 VGS=0V VDS=15V f=1.0MHz f=1.0MHz Min. Typ. 11.5 Max. Units ±100 Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 1950 3120 Source-Drain Diode Symbol Parameter Forward Voltage Test Conditions Tj=25, IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. Typ. 10.6 Max. Units Notes: Reverse Recovery Time Reverse Recovery Charge 1.Pulse width limited Max. junction temperature. 2.Starting Tj=25 VDD=50V L=1.0mH RG=25 IAS=10A. 3.Pulse test THIS PRODUCT ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT BEEN QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITERIAL COMPONENT LIFE SUPPORT DEVICE SYSTEM AUTHORIZED. AP10N70W Drain Current 6.0V 5.0V =150 6.0V 5.0V 4.5V Drain Current 4.0V 4.5V =4.0V Drain-to-Source Voltage Drain-to-Source Voltage Typical Output Characteristics Typical Output Characteristics =10V Normalized BVDSS Normalized RDS(ON) Junction Temperature Junction Temperature Normalized BVDSS v.s. Junction Temperature Normalized On-Resistance v.s. Junction Temperature Normalized VGS(th) Source-to-Drain Voltage Junction Temperature Forward Characteristic Reverse Diode Gate Threshold Voltage v.s. Junction Temperature AP10N70W f=1.0MHz 10000 Gate Source Voltage =10A =320V =400V =480V (pF) Total Gate Charge (nC) Drain-to-Source Voltage Gate Charge Characteristics Typical Capacitance Characteristics Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 0.05 0.02 Single Pulse 10ms 100ms 0.01 Single Pulse Duty factor Peak Rthjc 1000 0.01 0.00001 0.0001 0.001 0.01 Drain-to-Source Voltage Pulse Width Maximum Safe Operating Area Effective Transient Thermal Impedance td(on) td(off) Charge Switching Time Waveform Gate Charge Waveform ADVANCED POWER ELECTRONICS CORP. Package Outline TO-3P SYMBOLS Millimeters 4.50 0.90 1.80 1.30 0.40 1.40 19.70 14.70 15.30 4.45 17.50 3.00 4.80 1.00 2.50 -0.60 -20.00 15.00 -5.45 -3.20 5.10 1.30 3.20 2.30 0.90 2.20 20.30 15.30 16.10 6.45 20.50 3.40 1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions. Part Marking Information Packing TO-3P Part Number Package 10N70W YWWSSS LOGO Date Code (YWWSSS) Last Digit Year WWWeek Sequence Other recent searchesTCTP0G686M8R - TCTP0G686M8R TCTP0G686M8R Datasheet SD2000C - SD2000C SD2000C Datasheet PT5100 - PT5100 PT5100 Datasheet NTE152 - NTE152 NTE152 Datasheet NTE153 - NTE153 NTE153 Datasheet NTE152MP - NTE152MP NTE152MP Datasheet MAZS000 - MAZS000 MAZS000 Datasheet IDT77V1264L200 - IDT77V1264L200 IDT77V1264L200 Datasheet DS10CP152Q - DS10CP152Q DS10CP152Q Datasheet 2SB1494 - 2SB1494 2SB1494 Datasheet 2SD2256 - 2SD2256 2SD2256 Datasheet
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