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100% Avalanche Test Fast Switching Characteristic Simple Drive Require
Top Searches for this datasheetAP10N70R/P-A 100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) 650V Description AP10N70 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications.Both TO-220 TO-262 type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness. TO-220 TO-262 package widely preferred commercialindustrial applications. device suited switch mode power supplies, DC-AC converters high current high speed switching circuits. TO-262(R) TO-220(P) Absolute Maximum Ratings Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Rating 1.39 Units Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.72 Unit 201022074-1/4 Data specifications subject change without notice AP10N70R/P-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150 Test Conditions VGS=0V, ID=1.0mA VGS=10V, ID=5.0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10,VGS=10V RD=30 VGS=0V VDS=15V f=1.0MHz f=1.0MHz Min. Typ. 35.9 11.5 14.9 19.7 51.7 23.3 Max. Units ±100 Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 1950 3120 Source-Drain Diode Symbol Parameter Forward Voltage Test Conditions Tj=25, IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. Typ. 10.6 Max. Units Notes: Reverse Recovery Time Reverse Recovery Charge 1.Pulse width limited Max. junction temperature. 2.Starting Tj=25 VDD=50V L=1.0mH RG=25 IAS=10A. 3.Pulse test THIS PRODUCT ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT BEEN QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITERIAL COMPONENT LIFE SUPPORT DEVICE SYSTEM AUTHORIZED. AP10N70P/R-A Drain Current 6.0V 5.0V =150 6.0V 5.0V 4.5V Drain Current 4.0V 4.5V =4.0V Drain-to-Source Voltage Drain-to-Source Voltage Typical Output Characteristics Typical Output Characteristics =10V Normalized BVDSS Normalized RDS(ON) Junction Temperature Junction Temperature Normalized BVDSS v.s. Junction Temperature Normalized On-Resistance v.s. Junction Temperature Normalized VGS(th) Source-to-Drain Voltage Junction Temperature Forward Characteristic Reverse Diode Gate Threshold Voltage v.s. Junction Temperature AP10N70P/R-A f=1.0MHz 10000 Gate Source Voltage =10A =320V =400V =480V (pF) Total Gate Charge (nC) Drain-to-Source Voltage Gate Charge Characteristics Typical Capacitance Characteristics Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 0.05 0.02 Single Pulse 10ms 100ms 0.01 Duty factor Peak Rthjc Single Pulse 1000 0.01 0.00001 0.0001 0.001 0.01 Drain-to-Source Voltage Pulse Width Maximum Safe Operating Area Effective Transient Thermal Impedance td(on) td(off) Charge Switching Time Waveform Gate Charge Waveform ADVANCED POWER ELECTRONICS CORP. Package Outline TO-262 SYMBOLS Millimeters 4.24 -0.66 1.07 0.76 0.30 1.15 8.30 9.90 2.04 10.50 9.50 -10.80 4.44 -0.76 1.27 0.86 0.40 1.30 8.60 10.20 2.54 11.00 10.00 1.30 11.30 4.64 2.70 0.86 1.47 1.06 0.50 1.45 8.90 10.50 3.04 11.50 10.30 -11.35 1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions. Part Marking Information Packing TO-262 Part Number Package Code 10N70R LOGO YWWSSS Option Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence ADVANCED POWER ELECTRONICS CORP. Package Outline TO-220 SYMBOLS Millimeters 4.25 0.65 1.15 0.40 1.00 9.70 -12.70 2.60 1.00 14.70 6.30 3.50 8.40 4.48 0.80 1.38 0.50 1.20 10.00 -2.54 13.60 2.80 1.40 3.10 15.50 6.50 3.60 8.90 4.70 0.90 1.60 0.60 1.40 10.40 11.50 -14.50 3.00 1.80 6.70 3.70 9.40 1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions. Part Marking Information Packing TO-220 Part Number Package Code 10N70P LOGO YWWSSS Option Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence Other recent searchesTA7343AP - TA7343AP TA7343AP Datasheet SN74ABT16373A - SN74ABT16373A SN74ABT16373A Datasheet SN54ABT16373A - SN54ABT16373A SN54ABT16373A Datasheet MMBT3904 - MMBT3904 MMBT3904 Datasheet MMBT3906 - MMBT3906 MMBT3906 Datasheet LSR3331 - LSR3331 LSR3331 Datasheet ICS813076I - ICS813076I ICS813076I Datasheet CV111-3A - CV111-3A CV111-3A Datasheet CR1216 - CR1216 CR1216 Datasheet 1N4942 - 1N4942 1N4942 Datasheet 1N4948 - 1N4948 1N4948 Datasheet
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