100% Avalanche Test Fast Switching Characteristic Simple Drive Require
|
|
|
Top Searches for this datasheet
AP10N70R/P
100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
600V
Description
AP10N70 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications.Both TO-220 TO-262 type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness. TO-220 TO-262 package widely preferred commercialindustrial applications. device suited switch mode power supplies, DC-AC converters high current high speed switching circuits.
TO-262(R)
TO-220(P)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 1.39
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.72 Unit
201022073-1/4
Data specifications subject change without notice
AP10N70R/P
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
Test Conditions VGS=0V, ID=1.0mA VGS=10V, ID=5.0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10,VGS=10V RD=30 VGS=0V VDS=15V f=1.0MHz f=1.0MHz
Min.
Typ. 35.9 11.5 14.9 19.7 51.7 23.3
Max. Units ±100
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
1950 3120
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions Tj=25, IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min.
Typ. 10.6
Max. Units
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited Max. junction temperature.
2.Starting Tj=25 VDD=50V L=1.0mH RG=25 IAS=10A.
3.Pulse test
THIS PRODUCT ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT BEEN QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITERIAL COMPONENT LIFE SUPPORT DEVICE SYSTEM AUTHORIZED.
AP10N70P/R
Drain Current
6.0V 5.0V
=150
6.0V 5.0V 4.5V
Drain Current
4.0V
4.5V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
Normalized VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP10N70P/R
f=1.0MHz
10000
Gate Source Voltage
=10A
=320V =400V =480V (pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.05
0.02
Single Pulse
10ms 100ms
0.01
Single Pulse
Duty factor Peak Rthjc
1000
0.01 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
ADVANCED POWER ELECTRONICS CORP.
Package Outline TO-262
SYMBOLS
Millimeters
4.24 -0.66 1.07 0.76 0.30 1.15 8.30 9.90 2.04 10.50 9.50 -10.80
4.44 -0.76 1.27 0.86 0.40 1.30 8.60 10.20 2.54 11.00 10.00 1.30 11.30
4.64 2.70 0.86 1.47 1.06 0.50 1.45 8.90 10.50 3.04 11.50 10.30 -11.35
1.All Dimensions Millimeters.
2.Dimension Does Include Mold Protrusions.
Part Marking Information Packing TO-262
Part Number Package Code
10N70R
LOGO
YWWSSS
Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence
ADVANCED POWER ELECTRONICS CORP. Package Outline TO-220
SYMBOLS
Millimeters
4.25 0.65 1.15 0.40 1.00 9.70 -12.70 2.60 1.00 14.70 6.30 3.50 8.40
4.48 0.80 1.38 0.50 1.20 10.00 -2.54 13.60 2.80 1.40 3.10 15.50 6.50 3.60 8.90
4.70 0.90 1.60 0.60 1.40 10.40 11.50 -14.50 3.00 1.80 6.70 3.70 9.40
1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions.
Part Marking Information Packing TO-220
Part Number
Package Code
10N70R
LOGO
YWWSSS
Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence
Other recent searches
XBHR33D - XBHR33D XBHR33D Datasheet
TDA5240 - TDA5240 TDA5240 Datasheet
HT48R70A-1 - HT48R70A-1 HT48R70A-1 Datasheet
HT48C70-1 - HT48C70-1 HT48C70-1 Datasheet
EB362 - EB362 EB362 Datasheet
AM506027WM-BM - AM506027WM-BM AM506027WM-BM Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
