100% Avalanche Test Fast Switching Characteristic Simple Drive Require

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100% Avalanche Test Fast Switching Characteristic Simple Drive Require

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AP10N70I-A
100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
650V 0.62
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. TO-220CFM isolation package widely preferred commercial-industrial through hole applications.
TO-220CFM(I)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 31.3
Units
Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value Unit
Data specifications subject change without notice
200810311
AP10N70I-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
Test Conditions VGS=0V, ID=1.0mA VGS=10V, ID=5.0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=480V, VGS=0V VGS=±30V ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10,VGS=10V RD=30 VGS=0V VDS=15V f=1.0MHz f=1.0MHz
Min.
Typ. 11.5
Max. Units 0.62 ±100
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
1950 3120
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min.
Typ. 10.6
Max. Units
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited Max. junction temperature. 2.Starting Tj=25 VDD=50V L=1.0mH RG=25 IAS=10A. 3.Pulse test
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP10N70I-A
Drain Current
Drain Current
6.0V 5.0V
=150
4.5V
4.5V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
Normalized VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP10N70I-A
f=1.0MHz
3200
Gate Source Voltage
=10A
2400
(pF)
=320V =400V =480V
1600
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Duty factor=0.5
Normalized Thermal Response (Rthjc)
100us
0.05
0.02 0.01
10ms 100ms
0.01
Single Pulse
Duty factor Peak Rthjc
Single Pulse
0.01
0.001 1000 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
ADVANCED POWER ELECTRONICS CORP.
Package Outline TO-220CFM
SYMBOLS
Millimeters
4.30 2.30 0.50 0.95 0.45 2.30 9.70 12.00 2.91 14.70
4.70 2.65 0.70 1.20 0.65 2.60 10.00 -3.41 15.40 3.20 2.54
4.90 3.00 0.90 1.50 0.80 2.90 10.40 15.00 3.91 16.10
1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions.
Part Marking Information Packing TO-220CFM
Option
LOGO
10N70I YWWSSS
Part Number Package Code
Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence

100% Avalanche Test Fast Switching Characteristic Simple Drive Require

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