100% Avalanche test Fast Switching Simple Drive Requirement N-CHA

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100% Avalanche test Fast Switching Simple Drive Requirement N-CHA

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AP09N90W
100% Avalanche test Fast Switching Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
900V 8.6A
Description
AP09N90 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications. type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching, ruggedized design cost-effectiveness.
TO-3P
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 1.92
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.52 Units 200903053
Data specifications subject change without notice
AP09N90W
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Test Conditions VGS=0V, ID=1mA VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=4.5A VDS=900V, VGS=0V VGS=+30V, VDS=0V ID=8.6A VDS=540V VGS=10V VDD=450V ID=5A RG=10,VGS=10V RD=90 VGS=0V VDS=25V f=1.0MHz
Min.
Typ. 0.67 11.5 67.1 19.9 25.8 10.3 305.2
Max. Units +100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Drain-Source Leakage Current j=125 VDS=720V, VGS=0V
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
4087 6000
Source-Drain Diode
Symbol Notes: 1.Pulse width limited Max. junction temperature. 2.Starting Tj=25 VDD=50V L=6.8mH RG=25 IAS=5.2A. 3.Pulse test
Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.5V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=8.6A, VGS=0V
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP09N90W
Drain Current
5.5V
=150 Drain Current
5.0V 4.5V
5.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=4.5A =10V Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction
Normalized On-Resistance
VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N90W
f=1.0MHz
10000
=8.6A
Ciss
Gate Source Voltage
=180V =360V =540V
(pF)
Coss
Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Duty Factor
10us
Normalized Thermal Response (Rthjc)
100us
0.05
0.02
10ms Single Pulse 100ms
1000 10000
0.01 Single Pulse
Duty Factor Peak Rthjc
0.01 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

100% Avalanche test Fast Switching Simple Drive Requirement N-CHA

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