Minimize On-resistance Fast Switching Simple Drive Requirement N-
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AP09N90CW
Minimize On-resistance Fast Switching Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
900V 7.6A
Description
AP09N90C provides minimize on-state resistance superior switching performance high efficiency switching power supply applications. TO-3P package preferred commercial-industrial applications provides greater distance between pins meet requirements most safety specifications.
TO-3P
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value Unit
Data specifications subject change without notice
200903053
AP09N90CW
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
Test Conditions VGS=0V, ID=1mA VGS=10V, ID=3.6A VDS=VGS, ID=250uA VDS=10V, ID=3.6A VDS=900V, VGS=0V VGS=+30V, VDS=0V ID=7.2A VDS=540V VGS=10V VDD=450V ID=7.2A RG=6.8,VGS=10V RD=62.5 VGS=0V VDS=15V f=1.0MHz
Min.
Typ. 0.74 1.25 50.7 3097
Max. Units +100 5000
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Drain-Source Leakage Current j=125oC) VDS=720V, VGS=0V
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Notes: 1.Pulse width limited Max. junction temperature. 2.Starting Tj=25oC VDD=50V L=6.8mH RG=25 IAS=6A. 3.Pulse test Parameter Forward Voltage
Test Conditions IS=7.2A, VGS=0V IS=7.2A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time
Reverse Recovery Charge
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP09N90CW
Drain Current
Drain Current
7.0V 5.0V
=150
7.0V 5.0V 4.5V
4.5V
=4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=3.6A
=10V Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction
Normalized On-Resistance
VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N90CW
10000
f=1.0MHz
=7.2A Gate Source Voltage
=180V =360V =540V (pF)
Ciss
1000
Coss
Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
DUTY=0.5
100us
0.05
10ms 100ms Single Pulse
0.02
Duty factor Peak Rthjc
Single Pulse
0.01
1000 10000
0.01
0.00001
0.0001
0.001
0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
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