Lower On-resistance Fast Switching Characteristics Simple Drive Requir
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AP09N70P/R-H
Lower On-resistance Fast Switching Characteristics Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
700V
Description
AP09N70 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications.Both TO-220 TO-262 type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness. TO-220 TO-262 package universally preferred commercialindustrial applications. device suited switch mode power supplies ,DC-AC converters high current high speed switching circuits.
TO-220(P)
TO-262(R)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 1.25
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Units
Data specifications subject change without notice
200126072-1/6
AP09N70P/R-H
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ. 2660
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150
VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=4.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=9A VDS=480V VGS=10V VDD=300V ID=9A RG=10,VGS=10V RD=34 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Notes: 1.Pulse width limited safe operating area. 2.Starting Tj=25 VDD=50V L=6.8mH RG=25 IAS=9A. 3.Pulse width <300us duty cycle <2%.
Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.5V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=9A, VGS=0V
THIS PRODUCT ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT BEEN QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITERIAL COMPONENT LIFE SUPPORT DEVICE SYSTEM AUTHORIZED.
AP09N70P/R-H
=10V =6.0V =5.0V
=150
=10V =6.0V =5.0V
Drain Current
Drain Current
=4.5V
=4.5V
=4.0V
=4.0V =3.5V
=3.5V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=4.5A
=10V
Normalized BVDSS
Normalized DS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
AP09N70P/R-H
Drain Current
Case Temperature
Case Temperature(
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
DUTY=0.5
10us 100us
Normalized Thermal Response thjc)
0.05
0.02 0.01 SINGLE PULSE
10ms Single Pulse 100ms
Duty factor Peak Rthjc
1000 10000
0.01 0.00001
0.0001
0.001
0.01
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP09N70P/R-H
f=1.0MHz
10000
Ciss
Gate Source Voltage
=320V =400V (pF) =480V Coss
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
VGS(th)
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N70P/R-H
OSCILLOSCOPE 0.5x RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
RATED
Charge
Gate Charge Circuit
Gate Charge Waveform
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