Simple Drive Requirement Fast Switching Characteristic RoHS Compliant

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Simple Drive Requirement Fast Switching Characteristic RoHS Compliant

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AP09N50P-HF
Simple Drive Requirement Fast Switching Characteristic RoHS Compliant Halogen-Free
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
500V 0.75
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. TO-220 package widely preferred commercial-industrial applications. device suited switch mode power supplies, DC-AC converters high current high speed switching circuits.
TO-220(P)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating
Units
Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value Units 200906041
Data specifications subject change without notice
AP09N50P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=400V, VGS=0V VGS=+30V, VDS=0V ID=6A VDS=400V VGS=10V VDD=250V ID=6A RG=50,VGS=10V RD=42 VGS=0V VDS=25V f=1.0MHz
Min.
Typ.
Max. Units 0.75 +100
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
1370 2200
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=4.5A, VGS=0V IS=6A, VGS=0V dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited junction temperature. 2.Starting Tj=25oC VDD=50V L=1mH RG=25 3.Pulse test
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP09N50P-HF
Drain Current
Drain Current
6.0V
=150
6.0V
5.0V
10.0 20.0 30.0
12.0 16.0 20.0 24.0 28.0
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
=150
Normalized VGS(th)
IS(A)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N50P-HF
10000
f=1.0MHz
=400V Gate Source Voltage
1000
(pF)
Total Gate Charge (nC)
,Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
Duty factor
100us
10ms 100ms Single Pulse
0.05
0.02
0.01
Duty Factor Peak Rthjc
Single Pulse
0.01 1000
0.01 0.00001 0.0001 0.001 0.01
,Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Simple Drive Requirement Fast Switching Characteristic RoHS Compliant

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