On-resistance Simple Drive Requirement Fast Switching Characteristic

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

On-resistance Simple Drive Requirement Fast Switching Characteristic

Datasheet Thumbnail

Top Searches for this datasheet

AP09N50I
On-resistance Simple Drive Requirement Fast Switching Characteristic
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
500V 0.75
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. TO-220CFM isolation package widely preferred commercialindustrial through hole applications.
TO-220CFM(I)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 36.8
Units
Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value Units
Data specifications subject change without notice
200801112
AP09N50I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3 Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current
Test Conditions VGS=0V, ID=1mA VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=400V, VGS=0V VGS=±30V ID=6A VDS=400V VGS=10V VDD=250V ID=6A RG=50,VGS=10V RD=42 VGS=0V VDS=25V f=1.0MHz
Min.
Typ.
Max. Units 0.75 ±100
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
1370 2200
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=6A, VGS=0V IS=6A, VGS=0V dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited junction temperature. 2.Starting Tj=25oC VDD=50V L=1mH RG=25 3.Pulse test
THIS PRODUCT ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT BEEN QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITERIAL COMPONENT LIFE SUPPORT
DEVICE SYSTEM AUTHORIZED.
AP09N50I
Drain Current
Drain Current
6.0V
=150
6.0V
5.0V
10.0 20.0 30.0
12.0 16.0 20.0 24.0 28.0
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
=150
Normalized VGS(th)
IS(A)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N50I
10000
f=1.0MHz
=400V Gate Source Voltage
1000
(pF)
Total Gate Charge (nC)
,Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
Duty factor
100us
Single Pulse
0.01
10ms 100ms
0.05
0.02
0.01 Single Pulse
Duty Factor Peak Rthjc
0.01
1000
0.0001
0.001
0.01
,Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
ADVANCED POWER ELECTRONICS CORP.
Package Outline TO-220CFM
SYMBOLS
Millimeters
4.50 2.30 0.50 0.95 0.45 2.30 9.70 2.91
4.70 2.65 0.70 1.20 0.65 2.60 3.41 3.20 2.54
4.90 3.00 0.90 1.50 0.80 2.90 3.91
10.00 10.40
14.70 15.40 16.10
1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions.
Part Marking Information Packing TO-220CFM
Part Number
LOGO
09N50I YWWSSS
Package Code Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence

On-resistance Simple Drive Requirement Fast Switching Characteristic

Top Searches for this datasheet

Other recent searches