Simple Drive Requirement On-resistance Fast Switching Characteristics
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AP09N20H/J
Simple Drive Requirement On-resistance Fast Switching Characteristics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
200V 380m 8.6A
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. TO-252 package widely preferred commercial-industrial applications power dissipation levels approximately watts. through-hole version (AP09N20J) available low-profile applications.
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 0.55
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value Unit
Data specifications subject change without notice
200809112
AP09N20H/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions
Min.
Typ. 0.24
Max. Units +100
VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=200V, VGS=0V VGS= +30V ID=8.6A VDS=160V VGS=10V VDD=100V ID=8.6A RG=10,VGS=10V RD=11.6 VGS=0V VDS=25V f=1.0MHz
Drain-Source Leakage Current j=150 VDS=160V, VGS=0V
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Notes: 1.Pulse width limited safe operating area.
2.Starting Tj=25 VDD=50V L=1mH RG=25 IAS=8.6A.
Parameter Forward Voltage
Test Conditions IS=8.6A, VGS=0V IS=8.6A, VGS=0V, dI/dt=100A/µs
Min.
Typ. 2260
Max. Units
Reverse Recovery Time Reverse Recovery Charge
3.Pulse width <300us duty cycle <2%.
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP09N20H/J
8.0V
=150 Drain Current
Drain Current
8.0V 7.0V
7.0V
5.0V 5.0V
=4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th) =150
IS(A)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N20H/J
1000
f=1.0MHz
=8.6A Gate Source Voltage
=100V =120V =160V (pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
10ms
0.05
0.02
100ms
Duty factor Peak Rthjc
Single Pulse
0.01
Single Pulse
0.01
1000
0.00001
0.0001
0.001
0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
td(on) td(off)
Charge
Switching Time Waveform
Gate Charge Waveform
ADVANCED POWER ELECTRONICS CORP.
Package Outline TO-252
SYMBOLS
Millimeters
1.80 0.40 0.40 6.00 4.80 3.50 2.20 5.10 0.50 -0.35
2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50
2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65
1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions.
0.127~0.381
(0.1mm
Part Marking Information Packing TO-252
Part Number Package Code
09N20H
LOGO
YWWSSS
Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence
ADVANCED POWER ELECTRONICS CORP.
Package Outline TO-251
Millimeters
SYMBOLS
2.20 0.90 0.50 0.60 0.40 0.40 6.40 5.20 6.70 5.40 -5.88
2.30 1.20 0.69 0.87 0.50 0.50 6.60 5.35 7.00 5.80 2.30 6.84
2.40 1.50 0.88 1.14 0.60 0.60 6.80 5.50 7.30 6.20 -7.80
1.All Dimensions Millimeters.
2.Dimension Does Include Mold Protrusions.
Part Marking Information Packing TO-251
Part Number
09N20J YWWSSS
Package Code LOGO Date Code (YWWSSS) Last Digit Year Week Sequence
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