On-resistance Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE

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On-resistance Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE

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AP0903GM
On-resistance Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
8.5m 13.3A
Fast Switching Characteristic
SO-8
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SO-8 package widely preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Rating 13.3 10.7
Units
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
Value
Unit
Data specifications subject change without notice
200812122
AP0903GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=12A VGS=4.5V, ID=10A
Min.
Typ. 17.5
Max. Units +100 10.5
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VGS=+20V ID=12A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Drain-Source Leakage Current (Tj=70 VDS=24V, VGS=0V
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=2.1A, VGS=0V IS=12A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse test 3.Surface mounted copper board, <10sec when mounted Min. copper pad.
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP0903GM
Drain Current
Drain Current
=4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V Normalized RDS(ON)
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
=150
Normalized VGS(th)
IS(A)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP0903GM
f=1.0MHz
Gate Source Voltage
(pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Duty factor=0.5
Normalized Thermal Response (Rthja)
100us 10ms 100ms
0.05
0.02
0.01
0.01
Single Pulse
Duty factor Peak Rthja Rthja=125 oC/W
Single Pulse
0.01 0.01
0.001 0.0001 0.001 0.01 1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
4.5V
td(on) td(off)
Charge
Switching Time Waveform
Gate Charge Waveform

On-resistance Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE

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