On-resistance Simple Drive Requirement Fast Switching Characteristic

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

On-resistance Simple Drive Requirement Fast Switching Characteristic

Datasheet Thumbnail

Top Searches for this datasheet

AP0903GH
On-resistance Simple Drive Requirement Fast Switching Characteristic
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. TO-252 package widely preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
TO-252(H)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Rating 32.5
Units
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Value 62.5
Units
Data specifications subject change without notice
200812112
AP0903GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A
Min.
Typ.
Max. Units 14.5 ±100 10.5
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VGS=±20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time2 Reverse Recovery Charge
Notes:
1.Pulse width limited max. junction temperature 2.Pulse test 3.Surface mounted copper board
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP0903GH
6.0V Drain Current
=150
Drain Current
6.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=20A
=30A =10V Normalized RDS(ON)
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
IS(A)
=150
Normalized VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP0903GH
f=1.0MHz
=20A Gate Source Voltage
(pF)
=15V =18V =24V
Total Gate Charge (nC)
,Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
Duty factor
0.05
100us
0.02
Duty Factor Peak Rthjc
Single Pulse
10ms 100ms
0.01
Single Pulse
0.01 0.00001 0.0001 0.001 0.01
,Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
4.5V
td(on) td(off)
Charge
Switching Time Waveform
Gate Charge Waveform

On-resistance Simple Drive Requirement Fast Switching Characteristic

Top Searches for this datasheet

Other recent searches