100% Avalanche Test Fast Switching Characteristic Simple Drive Require

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100% Avalanche Test Fast Switching Characteristic Simple Drive Require

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AP05N50S-HF
100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement RoHS Compliant Halogen-Free
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
500V 5.0A
Description
AP05N50 provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching, ruggedized design cost-effectiveness. TO-263 package widely preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
TO-263(S)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 73.5
Units
Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Value
Unit 200906221
Data specifications subject change without notice
AP05N50S-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2.7A VDS=VGS, ID=250uA VDS=10V, ID=2.7A VDS=500V, VGS=0V VGS=+20V, VDS=0V ID=3.1A VDS=400V VGS=10V VDD=250V ID=3.1A RG=12,VGS=10V RD=80.6 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Min.
Typ.
Max. Units +100 1580
Drain-Source Leakage Current j=125 VDS=400V, VGS=0V
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=4.5A, VGS=0V IS=3.1A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited Max. junction temperature.
2.Starting Tj=25 VDD=50V L=10mH RG=25 IAS=3A.
3.Pulse test 4.Surface mounted copper board
THIS PRODUCT SENSITIVE ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT CRITICAL COMPONENT LIFE SUPPORT OTHER SIMILAR SYSTEMS AUTHORIZED. APEC DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. APEC RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN.
AP05N50S-HF
Drain Current
Drain Current
7.0V 6.0V
=150
5.0V
4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=2.7A =10V Normalized BVDSS Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
Normalized VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP05N50S-HF
f=1.0MHz
10000
=3.1A Gate Source Voltage =260V =320V =400V (pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.05
0.02 0.01
Duty factor Peak Rthjc
Single Pulse
10ms 100ms 1000
Single Pulse
0.01 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

100% Avalanche Test Fast Switching Characteristic Simple Drive Require

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