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100% Avalanche Test Fast Switching Characteristic Simple Drive Require


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AP05N50P
100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
500V 5.0A
Description
AP05N50 provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness. TO-220 package widely preferred commercial-industrial applications. good thermal performance package cost TO-220 Contribute wide industry application.
TO-220(P)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 73.5 0.59
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value Unit
201022072-1/4
Data specifications subject change without notice
AP05N50P
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=125
Test Conditions VGS=0V, ID=1mA VGS=10V, ID=2.7A VDS=VGS, ID=250uA VDS=10V, ID=2.7A VDS=500V, VGS=0V VDS=400V, VGS=0V VGS=±20V ID=3.1A VDS=400V VGS=10V VDD=250V ID=3.1A RG=12,VGS=10V RD=80.6 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Min.
Typ.
Max. Units ±100 1580
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions Tj=25, IS=4.5A, VGS=0V IS=3.1A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited Max. junction temperature.
2.Starting Tj=25 VDD=50V L=10mH RG=25 IAS=3A.
3.Pulse test
THIS PRODUCT ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT BEEN QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITERIAL COMPONENT LIFE SUPPORT DEVICE SYSTEM AUTHORIZED.
AP05N50P
Drain Current
Drain Current
7.0V 6.0V
=150
5.0V
4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=2.7A =10V Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
Normalized VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP05N50P
f=1.0MHz
10000
=3.1A Gate Source Voltage =260V =320V =400V (pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.05
Single Pulse
0.02 0.01
Duty factor Peak Rthjc
10ms 100m
1000
Single Pulse
0.01 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
ADVANCED POWER ELECTRONICS CORP. Package Outline TO-220
SYMBOLS
Millimeters
4.25 0.65 1.15 0.40 1.00 9.70 -12.70 2.60 1.00 14.70 6.30 3.50 8.40
4.48 0.80 1.38 0.50 1.20 10.00 -2.54 13.60 2.80 1.40 3.10 15.50 6.50 3.60 8.90
4.70 0.90 1.60 0.60 1.40 10.40 11.50 -14.50 3.00 1.80 6.70 3.70 9.40
1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions.
Part Marking Information Packing TO-220
Part Number
Package Code
05N50P
LOGO
YWWSSS
Date Code (YWWSSS) YLast Digit Year WWWeek SSSSequence

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